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首页> 外文期刊>Coatings >Effect of Cr Doping Concentration on the Structural, Optical, and Electrical Properties of Lead Sulfide (PbS) Nanofilms
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Effect of Cr Doping Concentration on the Structural, Optical, and Electrical Properties of Lead Sulfide (PbS) Nanofilms

机译：Cr掺杂浓度对硫化铅（PBS）纳米丝结构，光学和电性能的影响

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摘要

In this paper, pristine and Cr-doped lead sulfide (PbS) nanofilms were prepared by chemical and deposition methods. From X-ray diffraction (XRD) analysis, all nanofilm samples possessed good crystallinity with a preferential orientation of the (200) crystal plane. As the Cr doping concentration increased, the nanofilm grain size decreased from 71.5 to 18.9 nm. The SEM results revealed that the variation in Cr concentration led to different grain shapes, and the grain size became smaller with the increasing doping concentrations. Optical studies showed that the optical band gap of PbS films increased from 1.21 to 1.60 eV after Cr doping due to the quantum confinement effect; the 2% Cr-doped PbS nanofilm, with an Eg of 1.49 eV, matched the ideal band-gap value. The electrical characterization showed that, for a 2% Cr doping concentration, the Hall mobility and volume carrier concentration of the nanofilm reached the maximum values of 59.6 cm2?V?1?s?1 and 20.7 × 1016 cm?3 respectively. The 2 at.% Cr-doped PbS nanofilms exhibited the best optical and electrical properties, suitable for solar cell applications.
机译：在本文中，通过化学和沉积方法制备原始和Cr掺杂的硫化物（PBS）纳米纤维。从X射线衍射（XRD）分析中，所有纳米丝样品都具有良好的结晶度，具有（200）晶体平面的优先取向。随着CR掺杂浓度增加，纳米膜粒度从71.5降至18.9nm。 SEM结果表明，Cr浓度的变化导致不同的晶粒形状，随着掺杂浓度的增加，晶粒尺寸变小。光学研究表明，由于量子限制效应，PBS薄膜的光带隙从CR掺杂后的1.21至1.60eV增加; 2％Cr掺杂的PBS纳米丝，具有例如1.49eV，匹配理想的带间隙值。电学表征显示，对于2％Cr掺杂浓度，纳米膜的霍尔迁移率和体积载体浓度分别达到59.6cm 2的最大值为59.6cm 2 -1和20.7×1016cm≤3。 2 AT。％CR掺杂的PBS纳米丝液显示出最佳光学和电气性能，适用于太阳能电池应用。

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