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首页> 外文期刊>Coatings >Plasma Etching Behavior of YOF Coating Deposited by Suspension Plasma Spraying in Inductively Coupled CHF3/Ar Plasma
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Plasma Etching Behavior of YOF Coating Deposited by Suspension Plasma Spraying in Inductively Coupled CHF3/Ar Plasma

机译：在电感耦合CHF3 / AR等离子体中悬浮等离子体喷涂沉积YOF涂层的等离子体蚀刻行为

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Dense yttrium oxyfluoride (YOF) coating was successfully deposited by suspension plasma spraying (SPS) with coaxial feeding. After deposition for 6 min at a plasma power of 105 kW, the thickness of the YOF coating was 55 ± 3.2 μm with a porosity of 0.15% ± 0.01% and the coating rate was ~9.2 μm/min. The crystalline structure of trigonal YOF was confirmed by X-ray diffractometry (XRD). The etching behavior of the YOF coating was studied using inductively coupled CHF3/Ar plasma in comparison with those of the Al2O3 bulk and Y2O3 coating. Crater-like erosion sites and cavities were formed on the whole surface of the Al2O3 bulk and Y2O3 coating. In contrast, the surface of the YOF coating showed no noticeable difference before and after exposure to the CHF3/Ar plasma. Such high resistance of the YOF coating to fluorocarbon plasma comes from the strongly fluorinated layer on the surface. The fluorination on the surface of materials was confirmed by X-ray photoelectron spectrum analysis (XPS). Depth profiles of the compositions of Al2O3, Y2O3, and YOF samples by XPS revealed that the fluorination layer of the YOF coating was much thicker than those of Al2O3 and Y2O3. These results indicate that if the inner wall of the semiconductor process chamber is coated by YOF using SPS, the generation of contamination particles would be minimized during the fluorocarbon plasma etching process.
机译：通过具有同轴进料的悬浮等离子体喷涂（SPS）成功沉积浓度氧化钇（YOF）涂层。在105 kW的等离子体功率下沉积6分钟后，YOF涂层的厚度为55±3.2μm，孔隙率为0.15％±0.01％，涂布速率为约9.2μm/ min。通过X射线衍射法（XRD）证实了Trigonal YOF的结晶结构。与Al2O3散装和Y2O3涂层的那些相比，使用电感耦合的CHF3 / AR血浆研究YOF涂层的蚀刻行为。在Al2O3散装和Y2O3涂层的整个表面上形成了型陨石坑状腐蚀部位和腔。相反，YOF涂层的表面在暴露于CHF3 / AR等离子体之前和之后没有明显差异。 YOF涂层对氟碳血浆的这种高电阻来自表面上的强氟化层。通过X射线光电子和XPS）证实了材料表面上的氟化。通过XPS的Al2O3，Y 2 O 3和YOF样品的组合物的深度谱透露，YOF涂层的氟化层比Al2O3和Y2O3的氟化层厚得多。这些结果表明，如果通过YOF使用SPS涂覆半导体处理室的内壁，则在氟碳等离子体蚀刻工艺期间将最小化污染颗粒的产生。

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