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首页> 外文期刊>ETRI journal >Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
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Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas

机译：基于模型的BCl3 / Ar和BCl3 / CHF3 / Ar等离子体耦合ZrO2蚀刻机理的分析

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The etching mechanism of ZrO2 thin films and etch selectivity over some materials in both BCl3/Ar and BCl3/CHF3/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In BCl3/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, BCl2, and BCl2+. In this work, it is shown that the non-monotonic behavior of the ZrO2 etch rate as a function of the BCl3/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% CHF3 to the BCl3-rich BCl3/Ar plasma does not influence the ZrO2 etch rate, but it non-monotonically changes the etch rates of both Si and SiO2. The last effect can probably be associated with the corresponding behavior of the F atom density.
机译：结合实验和建模方法研究了ZrO2薄膜的刻蚀机理以及在BCl3 / Ar和BCl3 / CHF3 / Ar等离子体中对某些材料的刻蚀选择性。为了获得有关活性成分的血浆成分和通量的数据，使用Langmuir探针诊断数据开发了全局（0维）血浆模型。在BCl3 / Ar等离子体中，气体混合比的变化会导致Cl，BCl2和BCl2 +的密度和流量的非线性变化。在这项工作中，表明ZrO2蚀刻速率的非单调行为与BCl3 / Ar混合比的函数关系可能与离子辅助蚀刻机理和离子通量限制的蚀刻方式有关。向富含BCl3的BCl3 / Ar等离子体中添加多达33％的CHF3不会影响ZrO2的蚀刻速率，但是会非单调地改变Si和SiO2的蚀刻速率。最后一个作用可能与F原子密度的相应行为有关。

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