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首页> 外文期刊>Current Journal of Applied Science and Technology >Study and Analytical Modeling of the Influence of Technological and Geometric Parameters on the Performance of Ga067In033P=GaAs=Ga070In030As Tri-junction Photovoltaic Solar Cells
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Study and Analytical Modeling of the Influence of Technological and Geometric Parameters on the Performance of Ga067In033P=GaAs=Ga070In030As Tri-junction Photovoltaic Solar Cells

机译：技术和几何参数对GA067IN033P = GAAS = GA0703030AS三结光伏太阳能电池性能影响的研究与分析模型

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In the context of global energy consumption, the production of photovoltaic solar energy remains very low. One solution to this problem is to use multi-junction solar cells with high efficiency. Efforts are being made to increase the efficiency of solar cells and reduce their cost of production. In order to optimize the performance of multi-junction solar cells, this paper presents an analytical model allowing to study and model the influence of technological and geometric parameters on the performance of tri-junction solar cells Ga0:67In0:33P=GaAs=Ga0:70In0:30As. These parameters are the thickness, doping and Gap energy of the three sub-cells making up the tri-junction solar structure. The thicknesses and doping of the emitters (bases) of the sub-cells are varied and?chosen in order to optimize the efficiency of the Trijunction Solar Cell (TJSC) Ga0:67In0:33P=GaAs=Ga0:70In0:30As. The one hand, the base doping (emitter) is selected so as to minimize the dark current and the other hand,to reduce the resistive losses in this region. As for the thickness, it is chosen so as to minimize the recombination phenomena. The simulation results show that for a given thickness, the sub-cell efficiencies have maximums which evolve with the increase in doping. If the doping of the base (or emitter) of the sub-cells increases, there follows a proportional increase in the efficiency. In addition, when the optimal doping and thickness of the bases (or emitters) are reached, above these, they can vary over a wide range without considerably modifying the efficiency of the solar cell. This point about the tolerance ranges is very important for the practical realization of Photovoltaic solar cell structures. These results also show that the optimal performance of the Tri-junction Solar Cell are obtained for the relatively low thicknesses of the bases (or emitters) (100nm-700nm) with high doping values(Nb = 8e + 18cm.
机译：在全球能源消耗的背景下，光伏太阳能的生产仍然很低。这个问题的一个解决方案是使用高效率的多结太阳能电池。正在努力提高太阳能电池的效率，降低其生产成本。为了优化多结太阳能电池的性能，本文提出了一种分析模型，允许研究和模拟技术和几何参数对三联的太阳能电池GA0：67in0：33p = GaAs = Ga0的性能影响的影响： 70in0：30as。这些参数是构成三界太阳能结构的三个子单元的厚度，掺杂和间隙能量。子单元的发射器（碱基）的厚度和掺杂是变化的，并且选择以优化Trijunction太阳能电池（TJSC）Ga0：67in0：33p = GaAs = Ga0：70As的效率。一方面，选择基础掺杂（发射器）以使暗电流最小化，另一方面，以减少该区域的电阻损失。至于厚度，选择以最小化重组现象。仿真结果表明，对于给定的厚度，子细胞效率具有最大限度地随着掺杂的增加而发展。如果子单元的基础（或发射器）的掺杂增加，则效率的比例增加。另外，当达到碱（或发射器）的最佳掺杂和厚度时，它们可以在很宽的范围内变化而不大大修改太阳能电池的效率。关于公差范围的这一点对于光伏太阳能电池结构的实际实现非常重要。这些结果还表明，具有高掺杂值的碱（或发射器）（100nm-700nm）的相对低的厚度（Nb = 8e + 18cm，获得三结太阳能电池的最佳性能。

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