Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

Indu Sharma; Girija Shankar Papanai; Sharon Jyotika Paul; Bipin Kumar Gupta

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Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

机译：对低压化学气相沉积的单层石墨烯的部分压力辅助生长的校正：对高性能石墨烯FET器件的影响“

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There weretwo errors inourrecentonline publishedarticle,and the corrections are given below. These corrections donot affect the conclusions of the published article.

机译：Weretwo错误inourrecentonline publisticle，校正如下。这些更正不影响已发表的文章的结论。

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《ACS Omega》 |2020年第40期|共1页
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Indu Sharma; Girija Shankar Papanai; Sharon Jyotika Paul; Bipin Kumar Gupta;
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1. Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices [J] . Indu Sharma, Girija Shankar Papanai, Sharon Jyotika Paul, ACS Omega . 2020,第35期

机译：通过低压化学气相沉积种植单层石墨烯的部分压力辅助生长：对高性能石墨烯FET器件的影响
2. Tribological Performance of Steel With Multi-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition [J] . Singh Sudesh, Chen Xinchun, Zhang Chenhui, Journal of Tribology . 2020,第12期

机译：用低压化学气相沉积多层石墨烯的钢铁摩擦学性能
3. Control of the nucleation and quality of graphene grown by low-pressure chemical vapor deposition with acetylene [J] . Yang Meng, Sasaki Shinichirou, Suzuki Ken, Applied Surface Science . 2016,第Mara15期

机译：通过乙炔的低压化学气相沉积法控制石墨烯的成核和质量
4. Controllable Synthesis of Single-Crystal Monolayer Graphene on Copper Foils by Low-Pressure Chemical Vapor Deposition [C] . Lei Guo, Xuekang Chen, Lanxi Wang, The 14th Annual conference of the Chinese Society of Micro-Nano technology; The 3rd International conference of the Chinese Society of Micro-Nano technology; The 6th International workshop on innovation and commercialization of Micro amp; Nanotechnology . 2012

机译：低压化学气相沉积法在铜箔上可控合成单晶单层石墨烯
5. Studies in graphene growth and processing using atmospheric pressure chemical vapor deposition. [D] . Merrell, Andrew Nephi. 2016

机译：使用大气压化学气相沉积进行石墨烯生长和加工的研究。
6. Correction to Partial Pressure Assisted Growth of Single-LayerGraphene Grown by Low-Pressure Chemical Vapor Deposition: Implicationsfor High-Performance Graphene FET Devices [O] . Indu Sharma, *, Girija Shankar Papanai, 2020

机译：校正单层部分压力辅助生长由低压化学气相沉积种植的石墨烯：含义用于高性能石墨烯FET器件
7. Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices” [O] . Indu Sharma, Girija Shankar Papanai, Sharon Jyotika Paul, 2020

机译：对低压化学气相沉积的单层石墨烯的部分压力辅助生长的校正：对高性能石墨烯FET器件的影响“
8. Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices [R] . Friedman, A. L., Robinson, J. T., Perkins, F. K., 2011

机译：在分流化学气相沉积生长的石墨烯器件中的非凡磁阻

Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

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