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Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

机译：在分流化学气相沉积生长的石墨烯器件中的非凡磁阻

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We report gate tunable linear magnetoresistances (MRs) of600% at 12 T in metal-shunted devices fabricated on chemical vapor deposition (CVD) grown graphene. The effect occurs due to decreasing conduction through the shunt as the magnetic field increases (known as the extraordinary magnetoresistance effect) and yields an MR that is at least an order-of- magnitude higher than in un-shunted graphene devices.

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Friedman, A. L.; Robinson, J. T.; Perkins, F. K.; Campbell, P. M.;
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年度 2011
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Chemical vapor deposition ; Conductivity ; Graphene ; Magnetic fields ; Magnetoresistance ; Reprints;

机译：化学气相沉积;电导率;石墨烯;磁场;磁电阻;重印;

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专利

1. Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices [J] . Adam L. Friedman, Jeremy T. Robinson, F. Keith Perkins, Applied Physics Letters . 2011,第2期

机译：并联化学气相沉积生长石墨烯器件中的非凡磁阻
2. Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices” [J] . Indu Sharma, Girija Shankar Papanai, Sharon Jyotika Paul, ACS Omega . 2020,第40期

机译：对低压化学气相沉积的单层石墨烯的部分压力辅助生长的校正：对高性能石墨烯FET器件的影响“
3. Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices [J] . Indu Sharma, Girija Shankar Papanai, Sharon Jyotika Paul, ACS Omega . 2020,第35期

机译：通过低压化学气相沉积种植单层石墨烯的部分压力辅助生长：对高性能石墨烯FET器件的影响
4. Graphene field-effect transistors using large-area monolayer graphene grown by chemical vapor deposition on Co thin films [C] . Ramon M. E., Gupta A., Corbet C., 2011 69th Annual Device Research Conference . 2011

机译：使用通过在Co薄膜上化学气相沉积而生长的大面积单层石墨烯的石墨烯场效应晶体管
5. Creating Optoelectronic Devices From Atomically Thin Materials Grown by Chemical Vapor Deposition [D] . Han, Peize 2019

机译：从化学气相沉积生长的原子薄材料中创建光电器件
6. Correction to Partial Pressure Assisted Growth of Single-LayerGraphene Grown by Low-Pressure Chemical Vapor Deposition: Implicationsfor High-Performance Graphene FET Devices [O] . Indu Sharma, *, Girija Shankar Papanai, 2020

机译：校正单层部分压力辅助生长由低压化学气相沉积种植的石墨烯：含义用于高性能石墨烯FET器件
7. Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices” [O] . Indu Sharma, Girija Shankar Papanai, Sharon Jyotika Paul, 2020

机译：对低压化学气相沉积的单层石墨烯的部分压力辅助生长的校正：对高性能石墨烯FET器件的影响“

Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

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