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首页> 外文期刊>International Journal of Photoenergy >Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition
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Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

机译：微晶P-SiC / I-Si / N-Si薄膜太阳能电池的性能改进通过使用激光辅助等离子体增强化学气相沉积

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摘要

The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1to 512 cm−1as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2to 18.16 mA/cm2and from 6.89% to 8.58%, respectively.
机译：使用CO2LASER辅助等离子体增强的化学气相沉积（LAPECVD）系统，在低温下用氢等离子体处理用氢等离子体处理的微晶P-SiC / I-Si / N-Si薄膜太阳能电池。根据微拉曼的结果，I-Si膜从482cm-1转移到512cm-1as，辅助激光功率从0w到80w增加，这表明从无定形到晶体si逐渐变换。从X射线衍射（XRD）结果，获得（111），（220）和（311）衍射的微晶I-Si膜。与没有激光辅助的基于Si的薄膜太阳能电池，从6.89的14.38 mA / cm2到18.16 mA / cm2和辅助激光功率的短路电流密度和80W的激光功率的短路电流密度和电力转换效率。 ％〜8.58％。

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