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Analysis of the electrical behavior of silicon rich silicon oxides

机译：硅富硅氧化物电能分析

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The electrical behavior (capacitance–voltage and current–voltage) of MOS-like structures with silicon rich silicon oxide (SRO) as the dielectric material has been studied. The SRO active layer has been obtained by three different CMOS compatible techniques, namely low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD) and ion implantation. Different silicon excesses have been analyzed. The results have been related to the electroluminescent behavior of the samples. Two different conduction regimes have been identified: a high leakage regime and a low leakage regime. The former is related to an anomalous C–V behavior and to the luminescence from a limited number of dots in the area of the devices whereas the latter is related to a regular C–V behavior and to the homogeneous luminescence of the whole area of the devices.
机译：研究了用硅富氧化硅（SRO）的MOS状结构的电动特性（电容电压和电流电压）作为介电材料。通过三种不同的CMOS兼容技术，即低压化学气相沉积（LPCVD），等离子体增强化学气相沉积（PECVD）和离子注入，获得了SRO有源层。已经分析了不同的硅过量。结果与样品的电致发光行为有关。已经确定了两种不同的传导制度：高泄漏制度和低泄漏制度。前者与异常的C-V行为有关，并且从设备区域中的有限数量点到发光，而后者与常规的C-V行为有关，并且到整个区域的均匀发光有关设备。

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