Carrier lifetime in InAs / GaSb superlattice structures

Vinnichenko Maxim Ya.; Firsov Dmitry A.; Balagula Roman M.; Bobylev Alexander V.; Svensson Stefan P.; Donetsky Dmitry V.; Belenky Gregory L.; Vorobjev Leonid E.

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Carrier lifetime in InAs / GaSb superlattice structures

机译：INAS / GASB超晶格结构中的载体寿命

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The time-resolved photoluminescence (PL) data are studied for strained-layer InAs / GaSb superlattice structures at different excitation powers. Photoluminescence and absorption spectra are obtained. The minority carrier lifetime is obtained from PL frequency response to sin-wave modulated excitation. Similar results follow from analysis of the time-resolved PL data. It has been concluded that the minority carrier lifetime is limited by Shockley-Read-Hall recombination.

机译：在不同激励功率下研究了时间分辨的光致发光（PL）数据以进行应变层INAS / GASB超晶格结构。获得光致发光和吸收光谱。少数群体寿命是从PL频率响应获得SIN波调制激励的。类似的结果从分析时间分辨率的PL数据进行遵循。已经得出结论，少数民族载体寿命受到震撼读音乐厅重组的限制。

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《St. Petersburg Polytechnic University Journal: Physics and Mathematics》 |2013年第2期|共7页
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Vinnichenko Maxim Ya.; Firsov Dmitry A.; Balagula Roman M.; Bobylev Alexander V.; Svensson Stefan P.; Donetsky Dmitry V.; Belenky Gregory L.; Vorobjev Leonid E.;
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关键词
SUPERLATTICEOPTICAL ABSORPTIONCARRIER LIFETIMEINFRARED LIGHT;

机译：Superlatticeoptical吸收载波寿命寿命微射出光;

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专利

1. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures [J] . Dmitry Donetsky, Stefan P. Svensson, Leonid E. Vorobjev, Applied Physicsletters . 2009,第21期

机译：短周期InAs / GaSb应变层超晶格结构中的载流子寿命测量
2. Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices [J] . L.M. Murray, K.S. Lokovic, B.V. Olson, Journal of Crystal Growth . 2014,第jana15期

机译：生长速率变化对InAs / GaSb超晶格中载流子寿命和界面结构的影响
3. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice [J] . Klein Brianna, Gautam Nutan, Plis Elena, Journal of Vacuum Science & Technology . 2014,第2期

机译：中波红外II型InAs / GaSb应变层超晶格中的载流子寿命研究
4. Carrier Lifetime Measurements in InAs/GaSb Strained Layer Superlattice Structures [C] . Stefan P. Svensson, Dmitry Donetsky, Ding Wang, Conference on infrared technology and applications . 2010

机译：InAs / GaSb应变层超晶格结构中的载流子寿命测量
5. Study of Minority Carrier Lifetime and Transport in InAs/InAsSb type-II Superlattices Using a Real-Time Baseline Correction Method. [D] . Lin, Zhiyuan. 2016

机译：使用实时基线校正方法研究InAs / InAsSb II型超晶格中少数载流子的寿命和运输。
6. High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector [O] . Ju Sun, Nong Li, Qing-Xuan Jia, 2021

机译：高性能阳极硫化 - 预处理门控P + -IN-M-N + INAS / GASB超晶格长波长红外探测器
7. Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors [O] . Swarnadip Mukherjee, Anuja Singh, Aditi Bodhankar, 2021

机译：基于INAS / GASB的II型超晶格红外探测器的载体定位和MINIBAND建模
8. Study of Residual Background Carriers in Midinfrared InAs/GaSb Superlattices for Uncooled Detector Operation (POSTPRINT); Journal article [R] . Haugan, H. J., Elhamri, S., Szmulowicz, F., 2008

机译：用于非制冷探测器操作的中红外Inas / Gasb超晶格中残留背景载流子的研究（pOsTpRINT）;杂志文章

Carrier lifetime in InAs / GaSb superlattice structures

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