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High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism

机译:通过增强的闩锁机构进行旋转量子位的高保真单次读数

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The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes; however, uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities greater than 99.3% and 99.86% for the conventional and enhanced readout, respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2,0)–(1,1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has a one-electron signal, and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.
机译:基于旋转封锁的半导体旋转Qubits的读出快速,但是遭受小充电信号。以前的工作表明,从额外的充电映射进程中提出了大的利益;然而,不确定性仍然是潜在的机制和可实现的保真度。在这项工作中,我们研究了用于增强锁存读数的两个变体的单次保真度和限制机制。我们分别实现平均单次读数达到99.3%和99.86%的常规读数,分别是旋转封锁的最高到目前为止。信号幅度在保持读出速度的同时增强到全电子信号。此外,放宽布局约束,因为电荷传感器信号不再取决于与常规(2,0) - (1,1)电荷偶极子对准。硅供体 - 量子点Qubits用于本研究,其中偶极偶孔不敏感性基本上松弛供体放置要求。通过用充电稳定性的旋转弛豫过程更换自旋松弛过程,其中一个读出变化也有益于参数寿命增强。这提供了进一步提高忠诚的机会。研究了不同方案中的松弛机制。这项工作展示了快速的读数,具有单电子信号,并导致更高的保真度。它进一步预测,在几微秒的测量时间内超出99.9%的保真度在达到范围内。

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