Advanced Energy Materials 2019 Reactive plasma processes for formation of high-mobility IGZO thin film transistors - Yuichi Setsuhara - Osaka University

Yuichi Setsuhara

首页> 外文期刊>Journal of Electrical & Electronic Systems >Advanced Energy Materials 2019 Reactive plasma processes for formation of high-mobility IGZO thin film transistors - Yuichi Setsuhara - Osaka University

【24h】

Advanced Energy Materials 2019 Reactive plasma processes for formation of high-mobility IGZO thin film transistors - Yuichi Setsuhara - Osaka University

机译：2019年高级能源材料2019反应等离子体工艺，用于形成高流动性IGZO薄膜晶体管 - Yuichi Setsuhara - 大阪大学

获取原文

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Receptive plasma measure frameworks have been created by means of establishment of inductively-coupled plasmas (ICP) continued with low-inductance radio wire (LIA) for low-temperature manufacture of adaptable gadgets, which require enormous territory and low harm measures with reactivity control abilities at low substrate temperature. Significant favorable position of the receptive handling framework is that the reactivity during film-testimony cycles can be improved and controlled through low-harm and high-thickness plasma creation for low-temperature preparing of gadgets.

机译：通过建立电感耦合等离子体（ICP）的接受等离子体措施框架已经延续了低电感无线电线（LIA），用于适应性小工具的低温制造，需要巨大的领土和低危害对抗的反应性控制能力在低底物温度下。接受处理框架的显着良好位置是通过用于低温准备的低温准备，可以改善和控制薄膜证据循环期间的反应性。

著录项

来源
《Journal of Electrical & Electronic Systems》 |2020年第5期|共1页
作者
Yuichi Setsuhara;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Micron and submicron patterning of polydimethylsiloxane resists on electronic materials by decal transfer lithography and reactive ion-beam etching: Application to the fabrication of high-mobility, thin-film transistors [J] . Heejoon Ahn, Keon Jae Lee, William R. Childs, Journal of Applied Physics . 2006,第8期

机译：通过贴花转移光刻和反应性离子束蚀刻在电子材料上的聚二甲基硅氧烷抗蚀剂的微米和亚微米图案化：在高迁移率薄膜晶体管的制造中的应用
2. Low-temperature formation of high-mobility a-lnGaZnOx films using plasma- enhanced reactive processes [J] . Takenaka Kosuke, Endo Masashi, Hirayama Hiroyuki, Japanese journal of applied physics . 2019,第9期

机译：使用等离子增强反应工艺低温形成高迁移率的a-InGaZnOx薄膜
3. Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al_2O_3 gate insulator [J] . Xingwei Ding, Hao Zhang, He Ding, Superlattices and microstructures . 2014,第deca期

机译：基于ALD生长的Al_2O_3栅绝缘体的低压驱动和高迁移率薄膜晶体管的IZO / IGZO双有源层的生长
4. Characterization of stress-controlled a-IGZO thin films and their applications to thin-film transistor and micro-electromechanical system processes [C] . Iwamatsu Shinnosuke, Takechi Kazushige, Abe Yutaka, International Workshop on Active-Matrix Flatpanel Displays and Devices . 2013

机译：应力控制a-IGZO薄膜的表征及其在薄膜晶体管和微机电系统工艺中的应用
5. Advanced processes and characterization of amorphous silicon thin film transistors. [D] . Li, Tong. 2000

机译：非晶硅薄膜晶体管的先进工艺和特性。
6. Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates [O] . Ki-Woong Park, Won-Ju Cho 2021

机译：热损坏微波退火具有高效的能量转换用于在柔性基板上制造高性能A-IGZO薄膜晶体管
7. Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment [O] . S. Knobelspies, A. Takabayashi, A. Daus, 2018

机译：通过CF4 / O2等离子体处理改善柔性A-IGZO薄膜晶体管中的接触电阻

Advanced Energy Materials 2019 Reactive plasma processes for formation of high-mobility IGZO thin film transistors - Yuichi Setsuhara - Osaka University

摘要

著录项

相似文献

相关主题

期刊订阅