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Prediction of pressure-induced phase transformations in Mg3As2

机译:MG3As2中压力诱导相变的预测

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Pressure is a fundamental tool that can induce structural and electronic transformations, which is helpful to search for exotic materials not accessible at ambient conditions. Here, we have performed an extensive structural study on cubic Mg _(3) As _(2) in a pressure range of 0–100 GPa by using a combination of structure predictions and first-principle calculations. Interestingly, two novel structures with space groups C 2/ m and P were uncovered that become energetically most stable at pressures of 12 GPa and 30 GPa, respectively. Phonon dispersions demonstrate that the three phases are dynamically stable in their respective low-enthalpy pressure ranges. The electronic calculations show that Mg _(3) As _(2) keeps semiconductor properties at pressures up to 100 GPa. The interesting thing is that the direct semi-conducting property of Mg _(3) As _(2) transforms into indirect semi-conducting when the pressure is above 12 GPa. The current results provide new insights for understanding the behavior of Mg _(3) As _(2) at high pressures.
机译:压力是一种基本工具,可以诱导结构和电子变换,这有助于寻找在环境条件下无法访问的异​​国情调。在这里,我们通过使用结构预测和第一原理计算的组合对0-100GPa的压力范围的压力范围进行了大规模的结构研究。有趣的是,揭示了两种具有空间组C 2 / m和P的新型结构,分别在12GPa和30GPa的压力下能够大致稳定。声子分散体表明,三个阶段在各自的低焓压力范围内动态稳定。电子计算显示Mg _(3)作为_(2)将半导体性能保持在高达100GPa的压力下。有趣的是Mg _(3)的直接半导体属性作为_(2)变换成当压力高于12GPa时的间接半导体变换成间接半导体。目前的结果为了解高压下的Mg _(3)为_(2)的行为提供了新的见解。

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