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Transport properties of polycrystalline SnTe prepared by saturation annealing

机译:通过饱和退火制备的多晶SNE的运输性能

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Because the binary chalcogenide SnTe is an interesting Pb-free alternative to the state-of-the-art thermoelectric material PbTe, significant efforts were devoted to the optimization of its thermoelectric properties over the last few years. Here, we show that saturation-annealing treatments performed at 823, 873 or 973 K under Sn-rich conditions provide a successful strategy to prepare polycrystalline samples with a controlled concentration of Sn vacancies. Both scanning transmission electron microscopy and M?ssbauer spectroscopy demonstrate the absence of Sn-rich areas at the grain boundaries in the saturation-annealed samples. Transport property measurements, performed over a wide range of temperatures (5–800 K), show that this technique enables achieving thermoelectric performances at 800 K similar to those obtained using Sn self-compensation. The three saturation annealing temperatures result in comparable transport properties across the entire temperature range due to similar hole concentrations ranging between 1.0 and 1.5 × 10 ~(20) cm ~(?3) at 300 K. As equally observed in samples prepared by other synthetic routes, the temperature dependence of the Hall mobility evidences that charge transport is strongly affected by point-defect scattering caused by the random distribution of Sn vacancies.
机译:由于二元硫属化物SNTE是最先进的热电材料PBTE的无情替代,因此在过去几年中,致力于优化其热电性能的显着努力。在此,我们表明,在富含Sn的条件下在823,873或973K下进行的饱和退火处理提供了一种成功的制备具有SN缺点的多晶样品的多晶样品。扫描透射电子显微镜和M?Ssbauer光谱既显示出饱和退火样品中晶界的富含Sn的区域。运输性能测量,在宽范围的温度(5-800 k)上进行,表明该技术使得能够以800 k实现热电性能,类似于使用SN自补偿获得的那些。由于在300k的300k的相似孔浓度范围内,三个饱和退火温度导致整个温度范围内的相当的运输性能。如300k的类似孔浓度范围为1.0-1.5×10〜(20)cm〜(β3)。如在由其他合成制备的样品中均相同观察到路线,电荷运输的霍尔移动性的温度依赖性受到SN空位随机分布引起的点缺陷散射的强烈影响。

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