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Transport properties of polycrystalline SnTe prepared by saturation annealing

机译：通过饱和退火制备的多晶SNE的运输性能

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摘要

Because the binary chalcogenide SnTe is an interesting Pb-free alternative to the state-of-the-art thermoelectric material PbTe, significant efforts were devoted to the optimization of its thermoelectric properties over the last few years. Here, we show that saturation-annealing treatments performed at 823, 873 or 973 K under Sn-rich conditions provide a successful strategy to prepare polycrystalline samples with a controlled concentration of Sn vacancies. Both scanning transmission electron microscopy and Mossbauer spectroscopy demonstrate the absence of Sn-rich areas at the grain boundaries in the saturation-annealed samples. Transport property measurements, performed over a wide range of temperatures (5-800 K), show that this technique enables achieving thermoelectric performances at 800 K similar to those obtained using Sn self-compensation. The three saturation annealing temperatures result in comparable transport properties across the entire temperature range due to similar hole concentrations ranging between 1.0 and 1.5 x 10(20) cm(-3) at 300 K. As equally observed in samples prepared by other synthetic routes, the temperature dependence of the Hall mobility evidences that charge transport is strongly affected by point-defect scattering caused by the random distribution of Sn vacancies.
机译：由于二元硫属化物SNTE是最先进的热电材料PBTE的无情替代，因此在过去几年中，致力于优化其热电性能的显着努力。在此，我们表明，在富含Sn的条件下在823,873或973K下进行的饱和退火处理提供了一种成功的制备具有SN缺点的多晶样品的多晶样品。扫描透射电子显微镜和司瘤晶体光谱都证明了饱和退火样品中的晶界的富含Sn的区域。运输性能测量，在宽范围的温度（5-800 k）上进行，表明该技术使得能够以800 k实现热电性能，类似于使用SN自补偿获得的那些。三个饱和退火温度导致在整个温度范围内，由于在300K作为类似孔的浓度范围1.0和1.5之间×10（20）厘米（-3）中通过其它的合成路线制备的样品同样观察到可比较的输运性质，电荷运输的霍尔移动证据的温度依赖性受到SN空位的随机分布引起的点缺陷散射强烈影响。

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  • 来源
    《RSC Advances》 |2020年第10期|共10页
  • 作者

    Ibrahim Dorra; Misra Shantanu; Migot Sylvie; Ghanbaja Jaafar; Dauscher Anne; Malaman Bernard; Semprimoschnig Christopher; Candolfi Christophe; Lenoir Bertrand;

  • 作者单位

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

    European Space Agcy ESTEC POB 299 Keplerlaan 1 NL-2200 AG Noordwijk Netherlands;

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

    Univ Lorraine CNRS UMR 7198 Inst Jean Lamour 2 Allee Andre Guinier Campus ARTEM BP 50840 F-54011 Nancy France;

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  • 正文语种 eng
  • 中图分类 化学;
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