• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil
【24h】

Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil

机译：表面改性和激光重复率对柔性Ti金属箔GaN纳米杆的生长，结构，电子和光学性能的影响

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated. The GaN nanostructures were grown on bare- and pre-nitridated Ti foil substrates at 700 °C for different laser repetition rates (10–30 Hz). It is found that the low repetition rate (10 Hz) promotes sparse growth of three-dimensional inverted-cone like GaN nanostructures on pre-nitridated Ti surface whereas the entire Ti foil substrate is nearly covered with film-like GaN consisting of large-sized grains for 30 Hz growth. In case of the GaN growth at 20 Hz, uniformly-aligned, dense (～8 × 10 ~(9) cm ~(?2) ) GaN nanorods are successfully grown on pre-nitridated Ti foil whereas sparse vertical GaN nanorods have been obtained on bare Ti foil under similar growth conditions for both 20 and 30 Hz. X-ray photoemission spectroscopy (XPS) has been utilized to elucidate the electronic structure of GaN nanorods grown under various experimental conditions on Ti foil. It confirms Ga–N bonding in the grown structures, and the calculated chemical composition turns out to be Ga rich for the GaN nanorods grown on pre-nitridated Ti foil. For bare Ti substrates, a preferred reaction between Ti and N is noticed as compared to Ga and N leading to sparse growth of GaN nanorods. Hence, the nitridation of Ti foil is a prerequisite to achieve the growth of dense and aligned GaN nanorod arrays. The X-ray diffraction, high resolution transmission electron microscopy and Raman studies revealed the c -axis growth of wurtzite GaN nanorods on Ti metal foil with good crystallinity and structural quality. The photoluminescence spectroscopy showed that the dense GaN nanorod possesses a near band edge emission at 3.42 eV with a full width at half maximum of 98 meV at room temperature. The density-controlled growth of GaN nanorods on a flexible substrate with high structural and optical quality holds promise for potential applications in futuristic flexible GaN based optoelectronics and sensor devices.
机译：研究了柔性Ti金属箔表面改性和激光重复率在激光分子束外延生长过程中的影响，对GaN纳米棒的演化及其结构，电子和光学性能进行了研究。在700℃下在裸露和预氮化的Ti箔底物上生长GaN纳米结构，用于不同的激光重复速率（10-30Hz）。结果发现，低重复率（10Hz）促进三维倒锥像氮化的Ti表面上的三维倒锥体的稀疏生长，而整个Ti箔基材几乎覆盖着由大型大小的薄膜样GaN覆盖谷物30 Hz生长。在20Hz的GaN生长的情况下，均匀排列，致密（〜8×10〜（9）cm〜（Δ2））GaN纳米棒在预氮化的Ti箔上成功生长，而已经获得稀疏的垂直GaN纳米棒在20和30 Hz的相似生长条件下裸箔。已经利用X射线照射光谱（XPS）来阐明在Ti箔的各种实验条件下生长的GaN纳米棒的电子结构。它在生长的结构中证实了Ga-n键合，并且计算出的化学组成物致富硝化在预氮化的Ti箔上的GaN纳米棒。对于裸TI底物，与Ga和N相比，注意到Ti和N之间的优选反应，导致GaN纳米棒的稀疏生长。因此，Ti箔的氮化是实现致密和对准GaN纳米棒阵列的生长的先决条件。 X射线衍射，高分辨率透射电子显微镜和拉曼研究表明，Ti金属箔上的紫立岩GaN纳米棒的C- Xaxis生长，具有良好的结晶度和结构质量。光致发光光谱表明，致密的GaN nanorod在3.42eV处具有近带边缘发射，在室温下为每宽98meV的全宽。具有高结构和光学质量的柔性基板上的GaN纳米棒的密度控制的生长具有未来派柔性GaN的光电子和传感器装置的潜在应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号