• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates
【24h】

Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates

机译：在蓝宝石底板上轻松辅助近乎无应变的GaN薄膜的外延

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The nearly strain-free GaN films were epitaxially grown successfully on the Au-coated c -plane sapphire substrate by a convenient chemical vapor deposition approach. The growth of GaN single crystalline epitaxial films is a self-patterned process. The morphology, structure, compositions and optical properties of as-synthesized GaN materials were characterized through field-emission scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, energy dispersive spectroscopy mapping, Raman spectroscopy and photoluminescence spectroscopy. The characterization results confirm that the epitaxial GaN films grown on Au-coated c -plane sapphire substrates have a single-crystalline and nearly strain-free structure, and exhibit strong UV emission. A possible growth mechanism of the GaN film is proposed: Au-assisted vapor deposition initiates the nucleation of the GaN seeds, and then these seeds grow into inclined inverted hexagonal GaN pyramids with a threefold azimuthal symmetry and vertical inverted hexagonal pyramids; and subsequently, the vertical inverted hexagonal pyramids expand laterally and annihilate the inclined inverted hexagonal pyramids; eventually these vertical pyramids coalesced to form nearly strain-free GaN films. This synthesis strategy provides a new idea for the simple self-patterned growth of nearly strain-free GaN epitaxial films on Au-coated sapphire substrates, and will promote broader applications in GaN-based electronic and optoelectronic devices.
机译：通过方便的化学气相沉积方法将近几乎无应变的GaN薄膜在Au涂覆的C-plane蓝宝石衬底上成功地生长。 GaN单晶外延膜的生长是一种自图案化方法。通过现场发射扫描电子显微镜，原子力显微镜，X射线衍射，X射线光电子能谱，能量分散光谱映射，拉曼光谱和光致发光光谱，表征了一种形态，结构，组合物和光学性质的表征。 。表征结果证实，在Au-涂覆的C-plane蓝宝石衬底上生长的外延GaN膜具有单晶和几乎无应变的结构，并且表现出强紫外线排放。提出了GaN薄膜的可能生长机制：Au辅助气相沉积引发了GaN种子的成核，然后这些种子生长成倾斜的倒六方GaN金字塔，其具有三倍的方位称对称和垂直倒六角金字塔的倾斜倒六角形GaN金字塔;随后，垂直倒六角金字塔横向膨胀并湮灭倾斜倒六方金字塔;最终，这些垂直金字塔合并形成几乎无应变的GaN薄膜。该综合策略为Au涂层蓝宝石基板上的近乎应急的GaN外延薄膜的简单自我图案化生长提供了新的思路，并将促进GaN的电子和光电器件中的更广泛应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号