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首页> 外文期刊>RSC Advances >Morphology and carrier non-geminate recombination dynamics regulated by solvent additive in polymer/fullerene solar cells
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Morphology and carrier non-geminate recombination dynamics regulated by solvent additive in polymer/fullerene solar cells

机译：聚合物/富勒烯太阳能电池中溶剂添加剂调节的形态和载体非GEAMINATE重组动力学

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In this study, PBDTTT-E (based on benzo [1,2-b:4,5-b′] dithiophene (BDT) and thieno [3,4-b] thiophene (TT)) as a donor and fullerene derivative PC _(71) BM (phenyl-C _(71) -butyric acid methyl ester) as an acceptor with and without 1,8-diiodooctane (DIO)-treated copolymer solar cells were investigated. The device based on PBDTTT-E with treated DIO showed remarkably high current density ( J _(sc) ), fill factor (FF) and similar open-circuit voltage ( V _(oc) ). Charge carrier lifetime ( τ _( n ) ), density ( n ) and non-geminate recombination rate ( k _(rec) ) in the photoactive layers were measured by employing transient photovoltage (TPV) and charge extraction (CE) techniques. Based on k _(rec) and n , J – V curves were reconstructed. The DIO optimized the morphology of the active layer and its PBDTTT-E:PC _(71) BM interfaces were increased. Therefore, compared to the device without the treated DIO, the device with the treated DIO showed larger electron mobility, longer carrier lifetime ( τ _( n ) ) and lower non-geminate recombination rate ( k _(rec) ), which enhances the carrier transport and restrains the non-geminate recombination, realizing the higher J _(sc) and FF. In addition, that the DIO-treated devices can weaken the role of other factors (such as field dependent geminate recombination) in limiting device performance. The results provide some hints of improved device performance upon DIO as an additive in the D–A type polymer/fullerene solar cells.
机译：在本研究中，PBDTTT-E（基于苯并[1,2-B：4,5-B']二噻吩（BDT）和Thieno [3,4-B]噻吩（TT））作为供体和富勒烯衍生物PC _（71）BM（苯基-C _（71） - 丁酸甲酯）作为具有和没有1,8-二碘辛烷（DIO )--治疗的共聚物太阳能电池的受体。基于PBDTTT-E的具有处理的DIO的器件显示出显着的高电流密度（J _（SC）），填充因子（FF）和类似的开路电压（V _（OC））。通过采用瞬态光电电压（TPV）和电荷提取（CE）技术，测量光活性层中的密度（N）和非GEAMINATE重组率（K _（R））和电荷提取（CE）技术。重建基于K _（REC）和N，J - V曲线。 DIO优化了有源层的形态及其PBDTTT-E：PC _（71）BM接口增加。因此，与没有处理过的DIO的装置相比，具有处理过的DIO的装置显示出较大的电子迁移率，较长的载体寿命（τ_（n））和更低的非GEMINATE重组率（k _（rec）），其增强载流子传输并限制非GEAMINATE重组，实现更高的J _（SC）和FF。此外，DIO处理的装置可以在限制装置性能下削弱其他因素（例如诸如诸如域依赖的Geminate重组）的作用。结果在DIO上为D-A型聚合物/富勒烯太阳能电池中的添加剂提供了一些改进的装置性能。

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