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首页> 外文期刊>RSC Advances >A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates
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A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates

机译：ALD驱动HFXTIYALZO纳米纳米型界面化学和电气性能的演变的比较研究

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In this work, a series of ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios via atomic layer deposition (ALD) were deposited on Si substrates. The interfacial properties, band alignments, and electrical characteristics were analyzed to evaluate the electrical performance of the corresponding metal–oxide–semiconductor (MOS) capacitors. Based on the characterization data, it can be noted that the permittivity of HfTiO increases on increasing the Ti content, while the deterioration of the film quality leads to an increased leakage current. For TiAlO, as the Al content increased gradually, the interface quality improved, but the corresponding permittivity was sacrificed. As for HfTiAlO, the addition of Ti and Al jointly in HfO _(2) could improve the interface performance, enlarge the energy band offset, enhance the dielectric constant, and reduce the leakage current simultaneously. The interfacial analysis and electrical characterization demonstrated that HfTiAlO with an ALD cycle ratio of Hf?:?Ti?:?Al = 6?:?1?:?1 had the most excellent film quality, interface performance and electrical properties, including a larger dielectric constant of 28.8, a larger conduction band offset with Si of 2.47 eV, and the lowest leakage current density of 1.11 × 10 ~(?5) A cm ~(?2) .
机译：在这项工作中，通过原子层沉积（ALD）沉积了通过原子层沉积（ALD）不同化学计量比制备的一系列三元HFTIO和Tialo薄膜和季型HFTIALO膜。在Si底物上沉积。分析界面性质，带对准和电特性以评估相应的金属氧化物半导体（MOS）电容器的电性能。基于表征数据，可以注意到，HFTIO的介电常数增加增加Ti含量，而薄膜质量的劣化导致漏电流增加。对于Tialo，随着Al含量逐渐增加，界面质量得到改善，但处死了相应的介电常数。至于HFTIALO，在HFO _（2）中联合添加Ti和Al可以改善界面性能，扩大能带偏移，增强介电常数，并同时降低漏电流。界面分析和电学表征证明，HFFIALO具有HF的ALD循环比例？：？TI？：？Al = 6？：？1？：？1具有最优异的薄膜质量，界面性能和电气性能，包括更大介电常数为28.8，具有2.47eV的Si的较大导通带偏移，最低泄漏电流密度为1.11×10〜（？5），a cm〜（Δ2）。

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