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Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

机译：MOS2非易失性电阻切换装置恒定电应力下的电阻状态展开

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MoS _(2) has been reported to exhibit a resistive switching phenomenon in a vertical metal–insulator–metal (MIM) structure and has attracted much attention due to its ultra-thin active layer thickness. Here, the resistance evolutions in the high resistance state (HRS) and low resistance state (LRS) are investigated under constant voltage stress (CVS) or constant current stress (CCS) on MoS _(2) resistive switching devices. Interestingly, compared with bulk transition metal oxides (TMO), MoS _(2) exhibits an opposite characteristic in the fresh or pre-RESET device in the “HRS” wherein the resistance will increase to an even higher resistance after applying CVS, a unique phenomenon only accessible in 2D-based resistive switching devices. It is inferred that instead of in the highest resistance state, the fresh or pre-RESET devices are in an intermediate state with a small amount of Au embedded in the MoS _(2) film. Inspired by the capability of both bipolar and unipolar operation, positive and negative CVS measurements are performed and show similar characteristics. In addition, it is observed that the resistance state transition is faster when using higher electric stress. Numerical simulations have been performed to study the temperature effect with small-area integration capability. These results can be explained by a modified conductive-bridge-like model based on Au migration, uncovering the switching mechanisms in the ultrathin 2D materials and inspiring future studies in this area.
机译：据报道，MOS _（2）据报道，在垂直金属 - 绝缘体 - 金属（MIM）结构中具有电阻切换现象，并且由于其超薄有源层厚度而引起了很多关注。这里，在MOS _（2）电阻开关装置上的恒定电压应力（CVS）或恒定电流应力（CCS）下研究了高电阻状态（HRS）和低电阻状态（LRS）的电阻进化。有趣的是，与散装过渡金属氧化物（TMO）相比，MOS _（2）在“HRS”中在新鲜或预复位装置中表现出相反的特性，其中电阻在施加CVS后，电阻将增加到甚至更高的电阻，是一个独特的现象仅在2D基电阻开关设备中可访问。推断出代替在最高电阻状态，新鲜或预复位装置处于嵌入MOS _（2）膜中的少量Au的中间状态。灵感来自双极和单极运行的能力，进行正面和负CVS测量并显示出类似的特征。另外，观察到，当使用更高的电应力时，电阻状态转变更快。已经进行了数值模拟，以研究小区集成能力的温度效应。这些结果可以通过基于Au迁移的改进的导电电桥式模型来解释，揭示超薄2D材料中的切换机制，并鼓舞了该领域的未来研究。

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