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Indirect-to-direct band gap transition and optical properties of metal alloys of Cs2Te1?xTixI6: a theoretical study

机译:CS2Te1的金属合金的间接到直接的带隙转变和光学性质?Xtixi6:一个理论研究

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In recent years, double perovskites have attracted considerable attention as potential candidates for photovoltaic applications. However, most double perovskites are not suitable for single-junction solar cells due to their large band gaps (over 2.0 eV). In the present study, we have investigated the structural, mechanical, electronic and optical properties of the Cs _(2) Te _(1? x ) Ti _( x ) I _(6) solid solutions using first-principles calculations based on density functional theory. These compounds exhibit good structural stability compared to CH _(3) NH _(3) PbI _(3) . The results suggest that Cs _(2) TeI _(6) is an indirect band gap semiconductor, and it can become a direct band gap semiconductor with the value of 1.09 eV when the doping concentration of Ti ~(4+) is 0.50. Moreover, an ideal direct band gap of 1.31 eV is obtained for Cs _(2) Te _(0.75) Ti _(0.25) I _(6) . The calculated results indicate that all the structures are ductile materials except for Cs _(2) Te _(0.50) Ti _(0.50) I _(6) . Our results also show that these materials possess large absorption coefficients in the visible light region. Our work can provide a route to explore stable, environmentally friendly and high-efficiency light absorbers for use in optoelectronic applications.
机译:近年来,双重疫苗充足地吸引了广泛的光伏应用候选人的关注。然而,由于其大带空隙(超过2.0eV),大多数双重钙钛矿不适合单结太阳能电池。在本研究中,我们研究了基于的第一原理计算的CS _(2)TE _(1≤X)Ti _(x)I _(x)固体解决方案的结构,机械,电子和光学性质密度泛函理论。与CH _(3)NH _(3)PBI _(3)相比,这些化合物表现出良好的结构稳定性。结果表明,CS _(2)TEI _(6)是间接带隙半导体,当Ti〜(4+)的掺杂浓度为0.50时,它可以成为1.09eV的直接带隙半导体。此外,对于CS _(2)TE _(0.75)Ti _(0.25)I _(6),获得1.31eV的理想直接带隙。计算结果表明,除CS _(2)TE _(0.50)Ti _(0.50)I _(6)之外,所有结构都是延展性材料。我们的研究结果还表明,这些材料在可见光区域中具有大的吸收系数。我们的工作可以提供探索稳定,环保和高效的光吸收器的途径,用于光电应用。

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