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Epitaxial growth and nanoscale electrical properties of Ce2Ti2O7 thin films

机译：Ce2Ti2O7薄膜的外延生长和纳米级电性能

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(00 l ) epitaxial Ce _(2) Ti _(2) O _(7) thin films with a layered perovskite/monoclinic structure were grown on (110)-oriented Nb-doped SrTiO _(3) substrates via pulsed laser deposition and a sol–gel method associated with spin-coating. Using the sol–gel method, the Ce _(2) Ti _(2) O _(7) films were obtained by annealing at 950 °C under a reductive Ar/H _(2) atmosphere. Employing the pulsed laser deposition technique, they were directly grown under vacuum (10 ~(?6) mbar) with a controlled re-oxidation during the cooling step. The pole figure measurements provide the in-plane crystallographic relationships between the film and substrate: [001] _(SrTiO _(3) ) //[100] _(Ce _(2) Ti _(2) O _(7) ) and [1?10] _(SrTiO _(3) ) //[010] _(Ce _(2) Ti _(2) O _(7) ) . Piezoresponse force microscopy measurements highlight the local ferroelectric character of the films synthetized. The switching capability was more reliable for the film grown via pulsed laser deposition, which was explained by the lower mosaic spread. Higher local conductivity was also detected using conductive-atomic force microscopy of the physically deposited film and was attributed to its lower thickness. Such epitaxially deposited functional oxides may be considered as promising candidates for integration into advanced electronic devices.
机译：（00 L）外延Ce _（2）Ti _（2）o _（7）具有层状钙钛矿/单斜晶结构的薄膜通过脉冲激光沉积在（110）的Nb掺杂的SRTIO _（3）基板上生长和与旋涂相关的溶胶 - 凝胶方法。使用溶胶 - 凝胶法，通过在950℃下在还原Ar / h _（2）气氛下在950℃下退火来获得Ce _（2）Ti _（2）o_（7）膜。采用脉冲激光沉积技术，它们在真空（10〜（α6）毫巴）下直接生长，在冷却步骤期间具有受控的再氧化。极值图测量在胶片和基板之间提供面内晶形关系：[001] _（SRTIO _（3））// [100] _（CE _（2）Ti _（2）O _（7） ）和[1？10] _（SRTIO _（3））// [010] _（CE _（2）Ti _（2）O _（7））。压电响应力显微镜测量突出显示合成的薄膜的局部铁电特征。通过脉冲激光沉积的薄膜生长更可靠，通过脉冲激光沉积更可靠，这通过较低的马赛克扩散来解释。还使用物理沉积的膜的导电原子力显微镜检测较高的局部电导率，并且归因于其厚度较低。这种外延沉积的官能氧化物可以被认为是用于集成到先进电子设备中的有希望的候选者。

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