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Ultrahigh sensitivity in the amorphous ZnSnO UV photodetector

机译:非晶ZnSno紫外线光电探测器的超高敏感性

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An ultraviolet (UV) photodetector based on amorphous ZnSnO (α-ZTO) channel thin-film transistors (TFTs) with ultrahigh sensitivity was fabricated by a simple sol–gel method. The photodetectors are investigated at various intensities of 365 nm UV illumination, which exhibit ultrahigh sensitivity and responsivity. A reasonable mechanism is proposed for the superior UV detecting performance. Moreover, our device is promising for UV detection under weak UV illumination. The fabrication of the α-ZTO UV photodetector represents a significant step toward future multifunctional optoelectronic applications.
机译:通过简单的溶胶方法制造基于非晶ZnSNO(α-ZTO)通道薄膜晶体管(TFT)的紫外(UV)光电探测器由简单的溶胶 - 凝胶法制造。在365nm紫外线照明的各种强度下研究光探测器,其表现出超高敏感性和响应性。提出了合理的机制,用于高级紫外线检测性能。此外,我们的装置在弱UV照明下对UV检测有望。 α-ZTO UV光电探测器的制造代表了朝向未来多功能光电应用的重要步骤。

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