Ultrahigh sensitivity in the amorphous ZnSnO UV photodetector

Wang Weihao; Pan Xinhua; Dai Wen; Zeng Yiyu; Ye Zhizhen

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Ultrahigh sensitivity in the amorphous ZnSnO UV photodetector

机译：非晶ZnSno紫外线光电探测器的超高敏感性

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An ultraviolet (UV) photodetector based on amorphous ZnSnO (alpha-ZTO) channel thin-film transistors (TFTs) with ultrahigh sensitivity was fabricated by a simple sol-gel method. The photodetectors are investigated at various intensities of 365 nm UV illumination, which exhibit ultrahigh sensitivity and responsivity. A reasonable mechanism is proposed for the superior UV detecting performance. Moreover, our device is promising for UV detection under weak UV illumination. The fabrication of the alpha-ZTO UV photodetector represents a significant step toward future multifunctional optoelectronic applications.

机译：通过简单的溶胶 - 凝胶法制造基于非晶ZnSNO（α-ZTO）通道薄膜晶体管（TFT）的紫外（UV）光电探测器。在365nm紫外线照明的各种强度下研究光探测器，其表现出超高敏感性和响应性。提出了合理的机制，用于高级紫外线检测性能。此外，我们的装置在弱UV照明下对UV检测有望。 Alpha-ZTO UV光电探测器的制造代表了朝向未来多功能光电应用的重要步骤。

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来源
《RSC Advances》 |2016年第39期|共6页
作者
Wang Weihao; Pan Xinhua; Dai Wen; Zeng Yiyu; Ye Zhizhen;
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作者单位

Zhejiang Univ Sch Mat Sci &

Engn Cyrus Tang Ctr Sensor Mat &

Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

Zhejiang Univ Sch Mat Sci &

Engn Cyrus Tang Ctr Sensor Mat &

Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

Zhejiang Univ Sch Mat Sci &

Engn Cyrus Tang Ctr Sensor Mat &

Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

Zhejiang Univ Sch Mat Sci &

Engn Cyrus Tang Ctr Sensor Mat &

Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

Zhejiang Univ Sch Mat Sci &

Engn Cyrus Tang Ctr Sensor Mat &

Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

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正文语种 eng
中图分类化学;
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1. Ultrahigh sensitivity in the amorphous ZnSnO UV photodetector [J] . Wang Weihao, Pan Xinhua, Dai Wen, RSC Advances . 2016,第39期

机译：非晶ZnSno紫外线光电探测器的超高敏感性
2. Solution Grown Single-Unit-Cell Quantum Wires Affording Self- Powered Solar-Blind UV Photodetectors with Ultrahigh Selectivity and Sensitivity [J] . Li Dong, Hao Simeng, Xing Guanjie, Journal of the American Chemical Society . 2019,第8期

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3. Toward Ultrahigh Sensitivity and UV-Vis-NIR Broadband Response of Organolead Halide Perovskite/Tin-Phthalocyanine Heterostructured Photodetectors [J] . Huang Fobao, Peng Yingquan, Liu Guohan The journal of physical chemistry, C. Nanomaterials and interfaces . 2019,第17期

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4. Ultrahigh Responsivity UV/IR Photodetectors Based on Pure CuO Nanowires [C] . Abdelrahim Ate, Huichao Zhu, Xiaotong Quan, NNS 2013 . 2014

机译：基于纯CuO纳米线的超高响应紫外/红外光电探测器
5. High Performance UV Photodetector and Monolithic Integration of LED and Photodetector on p-GaN/AlGaN/GaN Heterostructure Grown on Si [D] . Lyu, Qifeng. 2021

机译：高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
6. UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors [O] . Changsong Chen, Peng Zhou, Na Wang, 2018

机译：紫外线辅助光化学合成还原氧化石墨烯/ ZnO纳米线复合材料以增强紫外线光电探测器的光响应。
7. Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed [O] . Dongwan Kim, Jae-Young Leem 2021

机译：通过超高响应速度的高性能UV光电探测器的热耗散退火方法结晶ZnO薄膜的结晶
8. Properties of Photodetectors (Photodetector Series, 97th Report). Spatial Sensitivity of LWIR Detectors. [R] . arrington, d. c. bates, r. l. 1976

机译：光电探测器的特性（光电探测器系列，第97报告）。 LWIR探测器的空间灵敏度。

Ultrahigh sensitivity in the amorphous ZnSnO UV photodetector

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