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首页> 外文期刊>RSC Advances >Synthesis, characterization and fabrication of ultrathin iron pyrite (FeS2) thin films and field-effect transistors
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Synthesis, characterization and fabrication of ultrathin iron pyrite (FeS2) thin films and field-effect transistors

机译：超薄铁黄铁矿（FES2）薄膜和场效应晶体管的合成，表征和制造

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摘要

We reported a synthesis of an ultrathin FeS _(2) thin film via thermal sulfurization of an iron thin film and its fabrication process for field-effect transistors. Reaction time was found to be essential for the growth of the crystallized FeS _(2) thin film. The thickness of Fe increased from 10 nm to 35 nm after the reaction. The FeS _(2) thin film has a resistivity of 0.345 Ω cm and a Hall mobility of 7.1 cm ~(2) V ~(?1) s ~(?1) , with a carrier concentration of 2.89 × 10 ~(18) cm ~(?3) . The fabricated FeS _(2) transistors have a reported highest current on/off ratio of 3.94 × 10 ~(4) and I _(on) of 0.117 mA. Moreover, the FeS _(2) based transistor not only broader the applications of pyrite, but also provides a platform for investigation of FeS _(2) materials. Temperature-dependent electrical transport measurements confirmed the rich intrinsic defect states in the FeS _(2) thin film, which indicates that reducing intrinsic defect might be the key issue to further improve the device performance.
机译：我们报道了通过铁膜薄膜的热硫化及其用于场效应晶体管的制造工艺的超薄FES _（2）薄膜的合成。发现反应时间对于结晶FES _（2）薄膜的生长至关重要。反应后Fe的厚度从10nm增加到35nm。 FES _（2）薄膜的电阻率为0.345Ωcm，霍尔迁移率为7.1cm〜（2）V〜（α1）s〜（？1），载体浓度为2.89×10〜（18 ）cm〜（？3）。制造的FES _（2）晶体管具有3.94×10〜（4）和0.117 mA的3.94×10〜（4）和I _（ON）的最高电流ON / OFF比。此外，基于FES _（2）的晶体管不仅更广泛地更宽了黄铁矿的应用，而且还提供了用于研究FES _（2）材料的平台。温度依赖的电气传输测量证实了FES _（2）薄膜中的富本质缺陷状态，这表明还原内在缺陷可能是进一步提高器件性能的关键问题。

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