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首页> 外文期刊>Npj Quantum Materials >Low-temperature dielectric anomaly arising from electronic phase separation at the Mott insulator-metal transition
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Low-temperature dielectric anomaly arising from electronic phase separation at the Mott insulator-metal transition

机译：在Mott绝缘子 - 金属过渡时从电子相分离产生的低温介电异常

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Coulomb repulsion among conduction electrons in solids hinders their motion and leads to a rise in resistivity. A regime of electronic phase separation is expected at the first-order phase transition between a correlated metal and a paramagnetic Mott insulator, but remains unexplored experimentally as well as theoretically nearby T = 0. We approach this issue by assessing the complex permittivity via dielectric spectroscopy, which provides vivid mapping of the Mott transition and deep insight into its microscopic nature. Our experiments utilizing both physical pressure and chemical substitution consistently reveal a strong enhancement of the quasi-static dielectric constant 1 when correlations are tuned through the critical value. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory. Our findings suggest a similar 'dielectric catastrophe' in many other correlated materials and explain previous observations that were assigned to multiferroicity or ferroelectricity.
机译：固体中导通电子之间的库仑排斥阻碍了它们的运动并导致电阻率的上升。在相关金属和顺磁卷积绝缘体之间的一阶相转变中预期电子相分离的制度，但实验上未探测，理论上仍然是在理论上附近的T = 0.我们通过介电光谱评估复杂介电常数来实现这个问题，它为Mott转变和深入了解其微观性质提供了生动的绘图。我们的实验利用物理压力和化学取代始终揭示了当通过临界值调谐相关时准静电介电常数1的强大提高。通过渗透理论补充的单带隆巴德模型的动态平均场理论，捕获了所有实验趋势。我们的研究结果表明了许多其他相关材料中类似的“介电灾难”，并解释了分配给多体性或铁电性的先前观察结果。

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