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首页> 外文期刊>Npj Quantum Materials >Giant linear magnetoresistance in half-metallic Sr2CrMoO6 thin films
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Giant linear magnetoresistance in half-metallic Sr2CrMoO6 thin films

机译：半金属SR2Crmoo6薄膜巨型线性磁阻

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Linear magnetoresistance (LMR) is a special case of a magnetic-field induced resistivity response, which has been reported in highly disordered semiconductor systems and in topological materials. In this work, we observe LMR effect in half-metallic perovskite Sr2CrMoO6 thin films, of which the maximum MR value exceeds +1600% at 2 K and 14 T. It is an unusual behavior in ferrimagnetic double perovskite material like Sr2CrMoO6, which are known for intrinsic tunneling-type negative magnetoresistance. In the thin films, the high carriers' density (~1022 cm 3) and ultrahigh mobility (~104 cm2 V 1 s 1) provide a low-resistivity (~10 ncm) platform for spin-polarized current. Our DFT calculations and magnetic measurements further support the half-metal band structure. The LMR effect in Sr2CrMoO6 could possibly originate from transport behavior that is governed by the guiding center motion of cyclotron orbitals, where the magnetic domain structure possibly provides disordered potential. The ultrahigh mobility and LMR in this system could broaden the applications of perovskites, and introduce more research on metallic oxide ferri-/ferro-magnetic materials.
机译：线性磁阻（LMR）是磁场诱导电阻率响应的特殊情况，其在高度无序的半导体系统和拓扑材料中已经报道。在这项工作中，我们观察到半金属钙钛矿SR2Crmoo6薄膜中的LMR效应，其中最大MR值超过2 k和14t的+ 1600％。它是SR2Crmoo6这样的不寻常行为，如SR2Crmoo6，这是已知的用于内在隧道型负磁阻。在薄膜中，高载体密度（〜1022cm 3）和超高迁移率（〜104cm 2 v 1 s 1）为旋转极化电流提供低电阻率（约10ncm）平台。我们的DFT计算和磁测量进一步支持半金属带结构。 SR2Crmoo6中的LMR效应可能来自由回旋加速器轨道的引导中心运动控制的传输行为，其中磁畴结构可能提供无序潜力。该系统中的超高流动性和LMR可以扩大Perovskites的应用，并对金属氧化物铁/铁磁性材料进行更多研究。

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