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Highly Transparent Conducting Electrodes Based on a Grid Structure of Silver Nanowires

机译：基于银纳米线的栅格结构的高度透明导电电极

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Transparent conducting electrodes (TCEs) formed with silver nanowires (AgNWs) have attracted attention as substitutes for indium tin oxide (ITO). However, the randomly deposited AgNW film performs poorly in terms of the transmittance and sheet resistance to serve as a substitute of ITO. To improve the performance of the AgNW film, we fabricated a grid-patterned AgNW by modifying the surface energy of the substrate. The hydrophobized surface was selectively etched by UV light through a quartz chrome mask, and a suspension of AgNWs in isopropyl alcohol/ethylene glycol mixture was coated on the substrate by a meniscus dragging deposition process. The grid-patterned AgNW film has a lower percolation threshold and a 13% higher figure-of-merit value compared to the randomly deposited AgNW film. The transparent thin films with a grid structure of AgNWs exhibit the high electrical conductivity with a sheet resistance of 33 Ohm/sq at a transmittance of 92.7% (λ = 550 nm).
机译：用银纳米线（AgNW）形成的透明导电电极（TCE）引起了氧化铟锡（ITO）的替代品。 然而，随机沉积的AgNW薄膜在透射率和薄层电阻方面表现不佳，以作为ITO的替代品。 为了提高AGNW薄膜的性能，我们通过修改基板的表面能而制造了网格图案化的Agnw。 通过紫外线光通过石英铬掩模选择性地蚀刻疏水化表面，并通过弯月面拖沉积过程涂覆在基板上的异丙醇/乙二醇混合物中AgNW的悬浮液。 与随机沉积的AgNW薄膜相比，网格图案化的Agnw膜具有较低的渗透阈值和13％的优异值。 具有AgNW的栅格结构的透明薄膜表现出高电导率，其薄片电阻为33欧姆/ Sq，透射率为92.7％（λ= 550nm）。

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