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首页> 外文期刊>Physical Review X >Spatially Resolved Decoherence of Donor Spins in Silicon Strained by a Metallic Electrode
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Spatially Resolved Decoherence of Donor Spins in Silicon Strained by a Metallic Electrode

机译：用金属电极应变的硅旋转的空间上分辨的旋转旋转

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Electron spins are amongst the most coherent solid-state systems known. However, to be used in devices for quantum sensing and information processing applications, they must typically be placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realizing such applications, but it is also challenging: Inferring such data from single-spin studies requires many measurements to obtain meaningful results, while ensemble measurements typically give averaged results that hide critical information. Here, we report a comprehensive study of the coherence of near-surface bismuth donor spins in 28-silicon at millikelvin temperatures. In particular, we use strain-induced frequency shifts caused by a metallic electrode to infer spatial maps of spin coherence as a function of position relative to the electrode. By measuring magnetic-field-insensitive clock transitions, we separate magnetic noise caused by surface spins from charge noise. Our results include quantitative models of the strain-split spin resonance spectra and extraction of paramagnetic impurity concentrations at the silicon surface. The interplay of these decoherence mechanisms for such near-surface electron spins is critical for their application in quantum technologies, while the combination of the strain splitting and clock transition extends the coherence lifetimes by up to 2 orders of magnitude, reaching up to 300?ms at a mean depth of only 100?nm. The technique we introduce here to spatially map coherence in near-surface ensembles is directly applicable to other spin systems of active interest, such as defects in diamond, silicon carbide, and rare earth ions in optical crystals.
机译：电子旋转是已知最相干的固态系统之一。但是，要在用于量子传感和信息处理应用程序的设备中使用，它们通常必须在接口附近放置。理解和减轻这种界面对电子旋转的相干性和光谱特性的影响对于实现这种应用是至关重要的，但它也是具有挑战性的：推断从单旋转研究的这种数据需要许多测量来获得有意义的结果，而这些数据通常是可以获得有意义的结果提供隐藏关键信息的平均结果。在这里，我们报告了近视铋供体旋转在Millikelvin温度下的28-硅的相干性的综合研究。特别地，我们使用由金属电极引起的应变诱导的频移，以作为相对于电极的位置的函数推断自旋相干性的空间映射。通过测量磁场不敏感的时钟过渡，我们将由表面旋转引起的磁噪声分离电荷噪声。我们的结果包括应变分裂自旋共振光谱的定量模型和硅表面上的顺磁杂质浓度的提取。这些近表面电子旋转的这些脱机机构的相互作用对于它们在量子技术中的应用至关重要，而应变分裂和时钟转变的组合将相干寿命延伸到多达2个级，最多300？MS在平均深度只有100？nm。我们在此介绍的技术在近表面集合中介绍的空间地图相干性是直接适用于其他有效兴趣的旋转系统，例如金刚石，碳化硅和光学晶体中的稀土离子的缺陷。

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