Interfacial and Bulk Polarization of P(VDF-HFP) Investigated by Dielectric Spectroscopy

Wang Qian; Liang Xidong; Liu Shuming; Zhang Yunxiao; Zhang Ling; Wu Chao; Gao Yanfeng

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Interfacial and Bulk Polarization of P(VDF-HFP) Investigated by Dielectric Spectroscopy

机译：介电光谱研究的P（VDF-HFP）的界面和散装极化

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Capacitors in electrical and electronic systems composed of thin film dielectrics operate under extremely high electric fields. Dynamics of charge transport and relaxation are closely correlated to the energy storage properties and electrical degradation of thin film dielectrics for capacitive applications. In this paper, the dielectric relaxation properties of poly (vinylidene fluoride-hexafluoropropylene) (P(VDF-HFP)) copolymer films are investigated over a broad frequency range from 10 mHz to 10 MHz and temperature range from -130 degrees C to 130 degrees C. The dielectric responses correlated to bulk and interfacial processes are clarified by varying the thickness and interfacial contact status of P(VDF-HFP) films. A low frequency process originating from the quasi-DC (QDC) process and a dielectric dispersion process correlated to the interfacial polarization are identified based on the Dissado-Hill dielectric response model and the equivalent circuit analysis. The high permittivity and high operation electric field of P(VDF-HFP) for capacitive energy storage give rise to improved blocking capacitance associated with the interface, suggesting the enhanced interfacial polarization. This work provides insights into the bulk and interface charge dynamics of polymer thin film dielectrics.

机译：由薄膜电介质组成的电气和电子系统中的电容器在极高的电场下操作。电荷运输和弛豫的动态与电容应用的薄膜电介质的储能性能和电降低密切相关。本文在宽频率范围内研究了聚（偏二氟醚 - 六氟丙烯）（P（VDF-HFP））共聚物膜的介电弛豫特性（P（VDF-HFP））共聚物膜，从10MHz至10MHz，温度范围为-130℃至130度C.通过改变p（VDF-HFP）膜的厚度和界面接触状态，阐明与体积和界面过程相关的介电响应。始于QuAsi-DC（QDC）工艺的低频过程和与界面极化相关的介电分散过程基于离子山介质响应模型和等效电路分析来识别与界面极化相关的电介质分散过程。用于电容能量存储的P（VDF-HFP）的高介电常数和高操作电场产生了与界面相关的改善的阻塞电容，表明增强的界面极化。这项工作为聚合物薄膜电介质的散装和界面充电动态提供了见解。

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来源
《IEEE Transactions on Dielectrics and Electrical Insulation》 |2021年第4期|1247-1254|共8页
作者
Wang Qian; Liang Xidong; Liu Shuming; Zhang Yunxiao; Zhang Ling; Wu Chao; Gao Yanfeng;
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作者单位

Tsinghua Univ Dept Elect Engn State Key Lab Power Syst Beijing Peoples R China;

Tsinghua Univ Dept Elect Engn State Key Lab Power Syst Beijing Peoples R China;

Tsinghua Univ Dept Elect Engn State Key Lab Power Syst Beijing Peoples R China;

Tsinghua Univ Dept Elect Engn State Key Lab Power Syst Beijing Peoples R China;

Tsinghua Univ Dept Elect Engn State Key Lab Power Syst Beijing Peoples R China;

Univ Connecticut Elect Insulat Res Ctr Inst Mat Sci Storrs CT USA;

State Grid Jibei Elect Power Co Ltd North China Elect Power Res Inst Co Ltd Res Inst Beijing Peoples R China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Polarization; Films; Capacitance; Dielectrics; Electric fields; Permittivity; Integrated circuit modeling; interfacial effect; charge transport; dielectric response; temperature dependence; equivalent circuit; blocking capacitance;

机译：偏振;电容;电介质;电场;介电常数;集成电路建模;界面效应;电荷运输;介电响应;温度依赖;等效电路;阻挡电容;阻塞电容;

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Interfacial and Bulk Polarization of P(VDF-HFP) Investigated by Dielectric Spectroscopy

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