Discover How to Write about Anything

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Discover How to Write about Anything

机译：探索如何写任何东西

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All writing-whether it's a powerful essay, a persuasive letter, a detailed business report, or an autobiographical story-is at its most effective and memorable when it's built on the fundamental critical and analytical skills that transform good writing into great writing. These skills include organizing your thoughts, crafting persuasive arguments, drawing on various literary styles, making responsible use of research materials, and avoiding common grammar errors.

机译：当所有的写作都建立在基本的批判和分析技能上，这些技巧将好的写作转化为出色的写作时，无论是有力的论文，有说服力的信件，详尽的商业报告还是自传故事，都是最有效和令人难忘的。这些技能包括组织思想，制定有说服力的论据，借鉴各种文学风格，负责任地使用研究材料以及避免常见的语法错误。

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《Discover》 |2011年第6期|p.61|共1页
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1. Tamaz Chantladze , document.write( ' Zurab Kipshidze , ' ); Zurab Kipshidze , document.write( ' Mziana Nachkebia , ' ); Mziana Nachkebia , document.write( ' Duglas Ugulava ' ); Duglas Ugulava [J] . Tamaz Chantladze, Zurab Kipshidze, Mziana Nachkebia, Computer Sciences and Telecommunications . 2017,第2期

机译：Tamaz Chantladze，document.write（“ Zurab Kipshidze”）; Zurab Kipshidze，document.write（“ Mziana Nachkebia”）; Mziana Nachkebia，document.write（'Duglas Ugulava'）;达格拉斯·乌瓜拉瓦
2. A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist [J] . Lu Chien-Yu, Chuang Ching-Te, Jou Shyh-Jye, Very Large Scale Integration (VLSI) Systems, IEEE Transactions on . 2015,第5期

机译：0.325 V，600 kHz，40 nm 72kb 9T亚阈值SRAM，具有对齐的升压写入字线和负写入位线写辅助
3. Low-Power Multiport SRAM With Cross-Point Write Word-Lines, Shared Write Bit-Lines, and Shared Write Row-Access Transistors [J] . Circuits and Systems II: Express Briefs, IEEE Transactions on . 2014,第3期

机译：具有交叉点写入字线，共享写入位线和共享写入行访问晶体管的低功耗多端口SRAM
4. A ReRAM-based single-NVM nonvolatile flip-flop with reduced stress-time and write-power against wide distribution in write-time by using self-write-termination scheme for nonvolatile processors in IoT era [C] . Chieh-Pu Lo, Wei-Hao Chen, Zhibo Wang, IEEE International Electron Devices Meeting . 2016

机译：基于ReRAM的单NVM非易失性触发器，通过针对物联网时代的非易失性处理器使用自写终止方案，减少了应力时间和写功率，从而避免了写时的广泛分布
5. Synchronous independent write cache: A novel SSD-aware write cache for RAID. [D] . Ganesh, Kalidas. 2016

机译：同步独立写缓存：一种新颖的RAID感知SSD的写缓存。
6. *To self* Don’t write a COVID editorial. Do not write another COVID editorial [O] . Michael Leveridge 2020

机译：*自我*不要写一个covid编辑。不要写另一个covid编辑
7. The impact of IAS 36 on goodwill disclosure: Evidence of the write-offs and performance effects The impact of IAS 36 on goodwill disclosure: Evidence of the write-offs and performance effects The impact of IAS 36 on goodwill disclosure: Evidence of the write-offs and performance effects [O] . Gabriele D'Alauro 2013

机译：IAS 36对商誉披露的影响：核销和业绩影响的证据IAS 36对商誉披露的影响：核销和业绩影响的证据IAS 36对商誉披露的影响：核销的证据绩效

Discover How to Write about Anything

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