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A seismic retrofit method by connecting viscous dampers for microelectronics factories

机译：微电子工厂中通过连接粘性阻尼器的抗震改造方法

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摘要

The implementation of viscous dampers to microelectronics factories has been previously proved not to affect the micro-vibration of the factories in operation so that the vibration-sensitive manufacturing process will not be interfered. Therefore, a seismic retrofit strategy which employs the viscous dampers installed in between the exterior and interior structures of the 'fab' structure is proposed in the study. The design formulas corresponding to the proposed retrofit method are derived using the non-proportional damping theory. Based on the study, it is found that the added damping ratio to the fab structure depends greatly on the frequency ratio of the two structures in addition to the damping coefficients of the added dampers. Outside the bandwidth of the frequency ratio in which the added damping ratio is very sensitive to the variation of the frequency ratio, the added damping ratio can be well captured using the classical damping theory.
机译：先前已证明在微电子工厂中使用粘性阻尼器不会影响正在运行的工厂的微振动，因此不会影响对振动敏感的制造过程。因此，本研究提出了一种地震改造策略，该策略采用了安装在“ fab”结构的外部和内部结构之间的粘性阻尼器。使用非比例阻尼理论推导了与拟议的改造方法相对应的设计公式。基于该研究，发现除了对阻尼器的阻尼系数之外，对fab结构的附加阻尼比还很大程度上取决于两个结构的频率比。在增加的阻尼比对频率比的变化非常敏感的频率比的带宽之外，可以使用经典阻尼理论很好地捕获增加的阻尼比。

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