Storage relies on DRAM

PALLAB CHATTERJEE

首页> 外文期刊>Electrical Design News >Storage relies on DRAM

【24h】

Storage relies on DRAM

机译：存储依赖于DRAM

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

As capacity and performance increase for computer storage in both enterprise and network-endpoint units, systems are increasingly reliant on DRAM in these products (Figure 1). The DRAM use has helped meet the performance requirements, observe the physical limits, and hold the power factor. Hard disks and most rotating media, such as optical disk drives, have a mechanical speed limitation that keeps their data coming off the read head at rates on the order of hundreds of megabits per second. However, most of the interfaces in use today, such as SATA, USB, and Thunderbolt, are all multi-ple-gigabit-per-second interfaces.

机译：随着企业级和网络端点单元中计算机存储容量和性能的提高，这些产品中的系统越来越依赖DRAM（图1）。 DRAM的使用有助于满足性能要求，遵守物理限制并保持功率因数。硬盘和大多数旋转介质（例如光盘驱动器）具有机械速度限制，该限制使它们的数据以每秒数百兆位的速率从读取头中流出。但是，当今使用的大多数接口（例如SATA，USB和Thunderbolt）都是每秒数千兆位的接口。

著录项

来源
《Electrical Design News》 |2012年第1期|p.20|共1页
作者
PALLAB CHATTERJEE;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. PINE PRAIRIE AND ENSTOR, TWO MAJOR INDEPENDENT GAS STORAGE PROVIDERS, BLAST FERC'S EXPANSION OF INTERSTATE PIPELINE CAPACITY RELEASE/TURNBACK REQUIREMENT TO INDEPENDENT STORAGE OPERATORS RELYING ON MARKET-BASED RATES; PINE PRAIRIE COMPLIANCE FILING ESTABLISHES DISTINCTIONS TO PROTECT OPERATOR FROM ECONOMIC HARM [J] . Foster Natural Gas Report Group Foster Natural Gas Report . 2011,第2853期

机译：松果和蘑菇，两个独立的气体存储提供商，BLAST FERC扩大了州际管道的容量释放/折返要求，以依赖于基于市场的价格独立存储运营商;松树草原法规遵从性建立区别于保护经营者免受经济损害的地区
2. Influence of Etch Profiles on the Leakage Current and Capacitance of 3-D DRAM Storage Capacitors [J] . Shin Seongun, Yoon Gyuhan, Choi Woo Young Nature reviews Cancer . 2019,第2期

机译：蚀刻轮廓对3-D DRAM存储电容的漏电流和电容的影响
3. A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors [J] . Woo Young Choi, Gyuhan Yoon, Woo Young Chung, Micromachines . 2019,第4期

机译：基于技术-计算机辅助设计的DRAM存储电容器可靠性预测模型
4. 1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor [C] . 2011 14th International Symposium on Electrets . 2011

机译：在22nm及更高工艺节点上的1T-DRAM：具有高k存储电容器的DRAM的替代品
5. Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications . [D] . Gowda, Srivardhan Shivappa. 2007

机译：用于DRAM和Flash应用的硅分子混合器件中氧化还原活性有机分子的多态电荷存储特性的研究。
6. A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors [O] . Woo Young Choi, Gyuhan Yoon, Woo Young Chung, 2019

机译：基于技术-计算机辅助设计的DRAM存储电容器可靠性预测模型
7. A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors [O] . Woo Young Choi, Gyuhan Yoon, Woo Young Chung, 2019

机译：基于技术 - 计算机辅助设计的DRAM存储电容的可靠性预测模型
8. DRAMs and DRAM Modules from Korea. Investigation No. 701-TA-431 (Final) [R] . 2003

机译：来自韩国的DRam和DRam模块。调查编号701-Ta-431（最终版）

Storage relies on DRAM

摘要

著录项

相似文献

相关主题

期刊订阅