Trench Termination With SiO<sub>2</sub>-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices

Hengyu Wang; Jue Wang; Li Liu; Yucen Li; Baozhu Wang; Hongyi Xu; Shu Yang; Kuang Sheng

首页> 外文期刊>Electron Device Letters, IEEE >Trench Termination With SiO₂-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices

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Trench Termination With SiO₂-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices

机译：SiO _{2 封装的电介质的沟槽端接，用于4H-SiC器件中的近理想击穿电压}

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Trench termination with SiO₂-encapsulated dielectric for 4H-SiC devices is proposed and experimentally demonstrated. The trench is mainly refilled with spin-on dielectric which is encapsulated with SiO₂to protect it from the high electric field in the trench. Such a trench termination is fabricated along with a high-voltage p-i-n diode. The fabricated device shows a repeatable breakdown voltage over 1750 V (96% of the ideal planar junction breakdown) with a termination length of

$14~mu ext{m}$

while the conventional trench termination has unrepeatable breakdown and requires over

$30~mu ext{m}$

termination length. Also, this termination length is less than ~ 1/4 of the dimension of a field limiting rings termination. Moreover, the fabrication process is robust with a large process window (Trench width ≥ 14

$mu ext{m}$

机译：使用SiO n _{2 n封装电介质。沟槽主要用旋涂电介质重新填充，旋涂电介质用SiO n ₂保护它免受沟槽中的高电场的影响。这种沟槽终端与高压p-i-n二极管一起制成。制成的器件显示出超过1750 V的可重复击穿电压（理想平面结击穿的96％），端接长度为 n $ 14〜 mu text { m} $ ，而常规沟槽终端具有不可重复的击穿，并且需要超过 n $ 30〜 mu text {m } $ 终止长度。而且，该终端长度小于磁场限制环终端的尺寸的〜1/4。而且，制造过程具有较大的工艺窗口（沟槽宽度≥14 n $ mu text {m} $ n）。}

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来源
《Electron Device Letters, IEEE》 |2018年第12期|1900-1903|共4页
作者
Hengyu Wang; Jue Wang; Li Liu; Yucen Li; Baozhu Wang; Hongyi Xu; Shu Yang; Kuang Sheng;
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作者单位

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

School of Information and Electrical Engineering, Zhejiang University City College, Hangzhou, China;

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

College of Electrical Engineering, Zhejiang University, Hangzhou, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Dielectrics; Electric fields; Silicon carbide; Junctions; Dielectric breakdown; Fabrication;

机译：电介质;电场;碳化硅;结;电介质击穿;制造;

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专利

1. Correction to “Trench Termination With SiO₂-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices” [J] . Wang Hengyu, Wang Jue, Liu Li, IEEE Electron Device Letters . 2019,第2期

机译：对“用SiO _{2 封装的电介质终止沟道以实现4H-SiC器件中近乎理想的击穿电压”的修正}
2. Trench Multiple Floating Limiting Rings Termination for 4H-SiC High-Voltage Devices [J] . Hao Yuan, Qingwen Song, Xiaoyan Tang, IEEE Electron Device Letters . 2016,第8期

机译：用于4H-SiC高压器件的沟槽式多个浮动限流环终端
3. Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices [J] . Sung Woongje, Huang Alex Q., Baliga B. Jayant Electron Device Letters, IEEE . 2015,第6期

机译：斜面结终止扩展— 4H-SiC高压器件的新型边缘终止技术
4. Correlation between surface morphology and breakdown characteristics of thermally grown SiO2 dielectrics in 4H-SiC MOS devices [C] . Uenishi Yusuke, Kozono Kohei, Mitani Shuhei, 2011 International Meeting for Future of Electron Devices, Kansai . 2011

机译：4H-SiC MOS器件中热生长的SiO 2 电介质的表面形态与击穿特性之间的相关性
5. A novel trench lateral power MOSFET with high breakdown voltage and low on-resistance [D] . Fujishima, Naoto 1998

机译：具有高击穿电压和低导通电阻的新型沟槽横向功率MOSFET
6. Dielectric Breakdown and Post-Breakdown Dissolution of Si/SiO2 Cathodes in Acidic Aqueous Electrochemical Environment [O] . Jeongse Yun, Yun-Bin Cho, Woohyuk Jang, -1

机译：酸性水电化学环境中Si / SiO2阴极的介电击穿和击穿后溶解
7. A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices [O] . T. Dai, L. Zhang, O. Vavasour, 2021

机译：用于高压4H-SIC器件的紧凑型沟槽辅助空间调制JTE设计

Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices

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Trench Termination With SiO₂-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices