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首页> 外文期刊>IEEE Electron Device Letters >New Method for Threshold Voltage Extraction of High-Voltage MOSFETs Based on Gate-to-Drain Capacitance Measurement
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New Method for Threshold Voltage Extraction of High-Voltage MOSFETs Based on Gate-to-Drain Capacitance Measurement

机译：基于门漏电容测量的高压MOSFET阈值电压提取新方法

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This letter reports on the extraction of the threshold voltage of laterally diffused MOS transistors. A clear analysis of the device physics is performed, highlighting the correlation between the change of the electron charge distribution along the channel and the device capacitance variations when the gate voltage is swept. Using numerical simulations, it is shown that the peak of the gate-to-drain capacitance is related to the transition of the surface from weak to moderate inversion in the intrinsic MOS transistor at the location of the maximum doping concentration, which corresponds to the threshold voltage of the device according to the MOS theory. Comparison between conventional I{sub}D/(g{sub}m){sup}(1/2) extraction and the new proposed capacitance peak method is performed on both technology computer-aided design simulations and measurements in order to confirm the new experimental technique and related theory.
机译：这封信报道了横向扩散MOS晶体管的阈值电压的提取。对器件的物理特性进行了清晰的分析，突出了扫描栅极电压时沿沟道的电子电荷分布的变化与器件电容变化之间的相关性。使用数值模拟表明，栅极至漏极电容的峰值与本征MOS晶体管在最大掺杂浓度位置处从弱反转到中等反转的跃迁有关。根据MOS理论的设备电压。在技​​术计算机辅助设计仿真和测量上均进行了常规I {sub} D /（g {sub} m）{sup}（1/2）提取与新提议的电容峰值方法之间的比较，以确认新的实验技术和相关理论。

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