Effect of H/sub 2/ content on reliability of ultrathin in-situ steam generated (ISSG) SiO/sub 2/

Luo T.Y.; Laughery M.

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Effect of H/sub 2/ content on reliability of ultrathin in-situ steam generated (ISSG) SiO/sub 2/

机译：H / sub 2 /含量对超薄原位蒸汽产生（ISSG）SiO / sub 2 /可靠性的影响

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This letter demonstrates the effect of H/sub 2/ percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H/sub 2/ percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (Q/sub BD/). Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO/sub 2/ network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.

机译：这封信证明了氧化过程中H / sub 2 /的百分比对原位蒸汽产生（ISSG）氧化物质量的影响。我们的结果表明，从应力引起的漏电流（SILC）和电荷击穿（Q / sub BD /）的角度来看，随着H / sub 2 /百分比的增加，ISSG氧化物的可靠性得到了显着提高。 ISSG氧化物的这种增强的可靠性可以通过高活性氧减少结构过渡层内SiO / sub 2 /网络中的缺陷（例如Si悬空键，弱Si-Si和应变Si-O键）来解释。假定由于氢的存在而与分子氧解离的原子。

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《IEEE Electron Device Letters》 |2000年第9期|P.430-432|共3页
作者
Luo T.Y.; Laughery M.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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1. Study of rapid thermal oxidation (RTO) and in-situ steam generation (ISSG) thin SiO{sub}2 films by gradient etching preparation [J] . N. Nagai, H. Hashimoto, T. Matsunobe, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001,第107期

机译：梯度蚀刻制备快速热氧化（RTO）和原位蒸汽产生（ISSG）SiO {sub} 2薄膜的研究
2. Study of rapid thermal oxidation (RTO) and in-situ steam generation (ISSG) thin SiO{sub}2 films by gradient etching preparation [J] . N. Nagai, H. Hashimoto, T. Matsunobe, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001,第107期

机译：通过梯度蚀刻制备研究快速热氧化（RTO）和原位蒸汽发生（ISSG）薄SiO {Sub} 2膜
3. In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability [J] . M. Langenbuch, R. Bottini M.E. Vitali, G. Ghidini Microelectronics & Reliability . 2005,第5a6期

机译：原位蒸汽发生（ISSG）与标准蒸汽技术的比较：对氧化物可靠性的影响
4. GATE DIELECTRICS FORMED BY REMOTE PLASMA NITRIDATION OF ULTRATHIN IN-SITU STEAM GENERATED (ISSG) OXIDES [C] . H.N. Al-Shareef, T.Y. Luo, A. Karamcheti, International Symposium on Rapid Thermal and Other Short-Time Processing Technologies, May 14-18, 2000, Toronto, Canada . 2000

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5. Electrical and physical analysis of ultra-thin in-situ steam generated (ISSG) silicon dioxide and nitride/oxide stacks for ULSI application [D] . Luo, Tien-Ying 2000

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Effect of H/sub 2/ content on reliability of ultrathin in-situ steam generated (ISSG) SiO/sub 2/

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