A proposed collector design of double heterojunction bipolar transistors for power applications

Liu W.; Pan D.S.

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A proposed collector design of double heterojunction bipolar transistors for power applications

机译：电源应用中双异质结双极晶体管的建议集电极设计

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A new collector design for the AlGaAs-GaAs double heterostructure bipolar transistor (DHBT) is proposed, analyzed, and simulated. The base-collector junction is linearly graded and terminated with a highly doped thin layer to offset the adverse alloy grading electric field. Simple analytical formulas are derived to facilitate the implementation of the design. A proof-of-principle simulation has been carried out for an X-band AlGaAs-GaAs power DHBT to confirm the design and the derived formula. The simulation shows the breakdown voltage can be increased from 30 V to about 45 V while the critical current density is about the same. It is also shown that, unlike other refined DHBT structures, the proposed structure does not require critical control in the fabrication of the base-collector junction.

机译：提出，分析和仿真了一种新的AlGaAs-GaAs双异质结构双极晶体管（DHBT）的集电极设计。基极-集电极结呈线性渐变，并以高掺杂薄层终止，以抵消不利的合金渐变电场。推导了简单的分析公式以促进设计的实施。对X波段AlGaAs-GaAs功率DHBT进行了原理验证仿真，以确认设计和导出的公式。仿真显示击穿电压可以从30 V增加到约45 V，而临界电流密度则大致相同。还显示出，与其他精制的DHBT结构不同，所提出的结构在基极-集电极结的制造中不需要严格的控制。

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《IEEE Electron Device Letters》 |1995年第7期|P.309-311|共3页
作者
Liu W.; Pan D.S.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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专利

1. AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications [J] . Chanh Nguyen, Takyiu Liu IEEE Electron Device Letters . 1996,第3期

机译：具有新型基极-集电极设计的AlInAs / GaInAs / InP双异质结双极晶体管，适用于电源应用
2. Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs [J] . Song J.-I., Caneau C. Electronics Letters . 1993,第21期

机译：具有不同集电极设计的GaInP / GaAs双异质结双极晶体管的特性
3. Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction [J] . Bolognesi C.R., Matine N. IEEE Electron Device Letters . 1999,第4期

机译：具有交错排列的基极-集电极结的无阻集电极InP / GaAs / sub 0.51 / Sb / sub 0.49 // InP双异质结双极晶体管
4. Full band ensemble monte carlo simulations for reliability investigation of highvoltage single double heterojunction bipolar transistors for military and base station applications including a proposed high breakdown composite collector design [C] . Madra S. ROCS Workshop, 2005. Reliability of Compound Semiconductors . 2005

机译：用于军事和基站应用的高压单和双异质结双极晶体管可靠性研究的全频带集成蒙特卡洛仿真，包括拟议的高击穿复合集电极设计
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications [O] . Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ), Monier, C, Chang, P.C, 2000

机译：互补低功耗应用中基于InGaAsN的异质结双极晶体管的仿真和设计
8. Exploratory Development of SiC Bipolar Transistors and GaN heterojunction Bipolar Transistors for High-Power Switching Applications. [R] . Cooper, J. A. 2003

机译：用于大功率开关应用的siC双极晶体管和GaN异质结双极晶体管的探索性开发。

A proposed collector design of double heterojunction bipolar transistors for power applications

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