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首页> 外文期刊>IEEE Electron Device Letters >A new 0.25- mu m recessed-channel MOSFET with selectively halo-doped channel and deep graded source/drain
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A new 0.25- mu m recessed-channel MOSFET with selectively halo-doped channel and deep graded source/drain

机译：新型0.25μm隐式沟道MOSFET，具有选择性地掺杂卤素的沟道和深渐变的源极/漏极

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摘要

To improve the performance and reliability of deep submicron MOS devices, a gate-recessed MOSFET (GR-MOSFET), which has a selectively halo-doped recessed channel and a deep graded source/drain formed without counterdoping, is proposed. The GR-MOS structure, which adopts a new doping concept, eliminates the tradeoff between drain-induced barrier lowering (DIBL) and hot-carrier effect, which are important to deep submicron device design. It also reduces the V/sub T/ lowering effect and the lateral electric field at the drain. A 0.25- mu m GR-MOSFET with a 10-nm gate oxide has exhibited 15% higher transconductance and 10% increased saturation current at V/sub D/=V/sub G/=3.3 V, 1 V higher BV/sub DSS/, and six times less substrate current compared with an LDD-MOSFET of the same device dimensions.
机译：为了提高深亚微米MOS器件的性能和可靠性，提出了一种栅凹槽MOSFET（GR-MOSFET），该栅凹槽MOSFET选择性地掺杂了光晕，并形成了深的渐变源极/漏极而没有反掺杂。采用新掺杂概念的GR-MOS结构消除了漏极诱导的势垒降低（DIBL）和热载流子效应之间的折衷，这对深亚微米器件设计很重要。它还降低了V / sub T /的降低效果以及漏极处的横向电场。在V / sub D / = V / sub G / = 3.3 V，BV / sub DSS高1 V的情况下，具有10nm栅氧化层的0.25μmGR-MOSFET表现出更高的跨导和10％的饱和电流，与相同器件尺寸的LDD-MOSFET相比，衬底电流小六倍。

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