Back-Gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization Guidelines

著录项

• 来源
  《IEEE Transactions on Electron Devices》 |2019年第2期|861-867|共7页
• 作者

  Bhoir Mandar S.; Chauhan Yogesh Singh; Mohapatra Nihar R.;

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• 作者单位

  IIT Gandhinagar, Dept Elect Engn, Gandhinagar 382355, India;

  IIT Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India;

  IIT Gandhinagar, Dept Elect Engn, Gandhinagar 382355, India;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Back-gate bias; ground plane (GP); negative feedback; radio frequency (RF); substrate effect; system on chip (SoC); ultrathin body and BOX fully depleted silicon-on-insulator (UTBB FD-SOI);

  机译：背栅偏置;地平面（GP）;负反馈;射频（RF）;基板效应;片上系统（SoC）;超薄体和BOX完全耗尽绝缘体上硅（UTBB FD-SOI）;