Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

Shih-En Huang; Chien-Lin Yu; Pin Su

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Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

机译：考虑量子约束效应的InGaAs和Si负电容FinFET阈值电压的鳍宽灵敏度研究

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摘要

This paper investigates the fin-width (

机译：本文研究了鳍片宽度（

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来源
《IEEE Transactions on Electron Devices》 |2019年第6期|2538-2543|共6页
作者
Shih-En Huang; Chien-Lin Yu; Pin Su;
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作者单位

Department of Electronics Engineering and Institute of Electronics National Chiao Tung University Hsinchu Taiwan;

Department of Electroni;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
FinFETs; Mathematical model; Numerical models; Indium gallium arsenide; Quantum capacitance; Logic gates; Sensitivity;

机译：FinFET;数学模型;数值模型;砷化铟镓;量子电容逻辑门灵敏度;

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专利

1. Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance [J] . Huang Shih-En, Lin Shih-Han, Su Pin Electron Devices Society, IEE . 2020,第期

机译：考虑量子电容考虑量子电容的InGaAs负电容双栅鳍片反转电荷特性和反转电荷损耗的研究
2. Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology [J] . M. Mustafa, Tawseef A. Bhat, M. R. Beigh World Journal of Nano Science and Engineering . 2013,第1期

机译：用于LSTP技术的双栅极n-FinFET结构基于金属栅极功函数的阈值电压灵敏度性能评估
3. Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation [J] . Saleh Ashrafi, Baharak Eslami 核技术（英文版） . 2016,第006期

机译：商业MOSFET在γ辐照下的灵敏度和阈值电压漂移的研究
4. Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs [C] . Shih-En Huang, Pin Su IEEE Electron Devices Technology and Manufacturing Conference . 2018

机译：InGaAs / Si沟道负电容FinFET阈值电压的鳍宽灵敏度研究
5. Investigation of the threshold voltage shift effect of lanthanum(III) oxide on tin/hafnium dioxide/lanthanum oxide/silicon dioxide/silicon stacks. [D] . Di, Ming. 2010

机译：研究氧化镧（III）对锡/二氧化ha /氧化镧/二氧化硅/硅叠层的阈值电压偏移效应。
6. InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities [O] . Clarissa Convertino, Cezar Zota, Heinz Schmid, 2019

机译：通过在氧化物腔中选择性生长将InGaAs FinFET直接集成在硅上
7. Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology [O] . M. R. Beigh, M. Mustafa, Tawseef A. Bhat 2013

机译：基于金属栅极功函数的阈值电压灵敏度基于LSTP技术的双栅极n-FinFET结构的性能评估

Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

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