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首页> 外文期刊>IEEE Transactions on Electron Devices >Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region
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Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region

机译：超级领域板技术，可以为横向动力装置提供电荷平衡效果而不占据漂移区

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摘要

The super junction has been the most important concept for the design of power devices. However, there are still two problems when the conventional super-junction techniques are applied on lateral power devices: a large portion of the drift region is occupied by a p-type region, and the super junction techniques are not suitable for the gallium nitride-based high electron mobility transistor (GaN-HEMT). To solve the problems, a super field plate (SuFP) technique is proposed as a charge balance principle. Our analyses proved that the SuFP can provide a charge balance effect for a lateral double diffused MOS (LDMOS) without occupying the drift region. As a result, the LDMOS with SuFP has a better performance than the LDMOS with other charge balance realization techniques. Moreover, as a kind of field plate, the SuFP is also suitable for GaN-HEMT. Thereby, the proposed SuFP technique overcomes the two problems in conventional super-junction techniques and is significant for lateral power devices.
机译：超级交界处是电力设备设计中最重要的概念。然而，当横向动力装置上施加传统的超结技术时，仍存在两个问题：漂移区域的大部分被P型区域占据，并且超结型技术不适用于氮化镓 - 基于高电子迁移率晶体管（GaN-HEMT）。为了解决问题，提出了一种超级领域（SUFP）技术作为电荷平衡原理。我们的分析证明，SUFP可以在不占用漂移区域的情况下为横向双扩散MOS（LDMOS）提供电荷平衡效果。因此，具有SUFP的LDMOS具有比具有其他电荷平衡实现技术的LDMO更好的性能。此外，作为一种磁场板，SUFP也适用于GaN-HEMT。因此，所提出的SUFP技术克服了传统超结术中的两个问题，并且对于横向动力装置而言是显着的。

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  • 来源
    《IEEE Transactions on Electron Devices》 |2020年第5期|2218-2222|共5页
  • 作者

    Zhang Chunwei; Guo Haijun; Chen Zhenxiang; Yue Wenjing; Li Yang; Zhang Long; Liu Siyang; Sun Weifeng;

  • 作者单位

    Univ Jinan Sch Informat Sci & Engn Shandong Prov Key Lab Network Based Intelligent C Jinan 250022 Peoples R China;

    Univ Jinan Sch Informat Sci & Engn Shandong Prov Key Lab Network Based Intelligent C Jinan 250022 Peoples R China;

    Univ Jinan Sch Informat Sci & Engn Shandong Prov Key Lab Network Based Intelligent C Jinan 250022 Peoples R China;

    Univ Jinan Sch Informat Sci & Engn Shandong Prov Key Lab Network Based Intelligent C Jinan 250022 Peoples R China;

    Univ Jinan Sch Informat Sci & Engn Shandong Prov Key Lab Network Based Intelligent C Jinan 250022 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

    Southeast Univ Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Charge balance; field plate; gallium nitride; high electron mobility transistor (HEMT); super junction;

    机译：充电平衡;场板;氮化镓;高电子迁移率晶体管（HEMT）;超结;

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