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首页> 外文期刊>Electron Devices, IEEE Transactions on >Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration
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Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration

机译：不同碳掺杂浓度GaN层缺陷特性和载流子传输机制的研究

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摘要

In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to investigate the defect characteristics and carrier transport mechanisms in GaN:C layers with different carbon doping concentration. Capacitance-voltage, current–voltage, and deep-level transient spectroscopy measurements were performed at different temperatures. At forward bias, a pinning effect was found at the interface of the GaN:C/GaN:Si layer, due to the defects capturing electrons. The forward currents of the samples with high carbon doping concentration ( ${N}_{C}> {1} imes 10^{{19}}$ cm−3) increase gradually with increasing forward bias voltage. Ohm’s law, space-charge-limited current, and variable-range-hopping mechanisms may dominate the forward current. For the samples with low carbon doping concentration ( ${N}_{C} < {1} imes 10^{{19}}$ cm−3), a device turning on behavior was observed, which is attributed to the carriers overcoming a potential barrier. In addition, the DLTS spectra reveal that only electron trapping happens at forward bias for the samples with high carbon doping concentration, while, in addition, hole trapping was observed for the samples with low carbon doping concentration. The process of the carrier capture by defects was demonstrated.
机译：在本文中，使用金属/碳掺杂GaN（GaN：C）/ Si掺杂GaN（GaN：Si）结构来研究GaN：C层的缺陷特性和载体传输机制，具有不同的碳掺杂浓度。电容电压，电流电压和深级瞬态光谱测量在不同的温度下进行。在前向偏置时，由于捕获电子的缺陷，在GaN：C / GaN：Si层的界面处发现了固定效果。具有高碳掺杂浓度的样品的前方电流（<内联公式XMLNS：MML =“http://www.w3.org/1998/math/mathml”xmlns：xlink =“http://www.w3.org/1999/xlink”> $ {n} _ {c}> {1} times 10 ^ {{19}} $ 厘米 -3 ）随着正向偏置电压逐渐增加。欧姆的定律，空间充电限制电流和可变范围跳跃机制可以主导前进电流。对于具有低碳掺杂浓度的样品（<内联公式XMLNS：MML =“http://www.w3.org/1998/math/mathml”xmlns：xlink =“http://www.w3.org/1999/xlink”> $ {n} _ {c} <{1} times 10 ^ {{19}} $ 厘米 -3 ），观察到接通行为的设备，其归因于载体克服潜在的屏障。此外，DLTS光谱揭示仅在具有高碳掺杂浓度的样品的正向偏压下仅发生电子捕集，同时，对于具有低碳掺杂浓度的样品，观察到空穴俘获。证明了缺陷载体捕获的过程。

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