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首页> 外文期刊>IEEE Transactions on Electron Devices >Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer
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Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

机译：GaN沟道层厚度对复合AlGaN / GaN缓冲层GaN HEMT的DC和RF性能的影响

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摘要

The effects of GaN channel layer thickness on dc and RF performance of AlGaN/GaN high-electron mobility transistors (HEMTs) with a state-of-the-art composite AlGaN/GaN (1/1 $mu{rm m}$ ) buffer were systematically investigated. Although HEMTs with a thick GaN channel layer exhibit slight degraded dc and RF small-signal performance associated with short-channel effects, they demonstrate significantly enhanced OFF-state breakdown voltage and RF large-signal performance. The 1-mm HEMTs with a 150-nm-thick GaN channel layer feature a 1.4 dB higher saturated $P_{rm OUT}$ and about 10% higher PAE than that with a 50-nm-thick GaN channel layer, in both Classes AB and B operation conditions. Pulse $I{-}V$ characterization reveals that the buffer-related current collapse is also suppressed in the thick GaN channel sample as compared with the thin one, suggesting that a thick GaN channel layer will not only reduces the deep traps in the channel, but also reduces the electron capture probability by deep traps in the composite AlGaN/GaN buffer. The selection of a proper GaN channel layer thickness is thus of great importance to the designation of GaN-based power amplifiers for various applications.
机译：GaN通道层厚度对采用先进复合AlGaN / GaN（1/1μmu{rm m} $）缓冲层的AlGaN / GaN高电子迁移率晶体管（HEMT）的直流和RF性能的影响被系统地调查了。尽管具有较厚GaN沟道层的HEMT表现出与短沟道效应相关的轻微的dc和RF小信号性能下降，但它们显示出关态击穿电压和RF大信号性能显着增强。在两个类别中，具有150nm厚GaN沟道层的1mm HEMT的饱和$ P_ {rm OUT} $比具有50nm厚GaN沟道层的饱和$ P_ {rm OUT} $高1.4 dB，PAE约高10％。 AB和B操作条件。脉冲$ I {-} V $的表征表明，与较薄的GaN沟道样品相比，较厚的GaN沟道样品还抑制了与缓冲器相关的电流塌陷，这表明较厚的GaN沟道层不仅会减少沟道中的深陷阱， ，但也会降低复合AlGaN / GaN缓冲层中的深陷阱，从而降低电子捕获的可能性。因此，选择合适的GaN沟道层厚度对于各种应用的GaN基功率放大器的设计至关重要。

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