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首页> 外文期刊>Electron Devices, IEEE Transactions on >A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs
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A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs

机译：微波多指基于InP的DHBT电热耦合与电磁仿真的组合模型

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摘要

This paper presents a combined model with electrothermal coupling and electromagnetic (EM) simulation for multifinger InP-based double heterojunction bipolar transistors (DHBTs). The electrothermal coupling effect, which occurs in multifinger InP DHBTs, is characterized based on 3-D thermal simulation. In addition, EM simulation technique is presented to account for the distributed effect of interconnection of the fingers and their surroundings. A large-signal model for single-finger DHBTs is implemented as a seven-port symbolically defined device, which accounts for several physical phenomena, including the self-heating effect, Kirk effect, current blocking effect, mobile charge modulation of the base–collector capacitance, and velocity field modulation in the transit time. The combined model implemented in Agilent-ADS is verified by comparing the simulated and measured data in dc small-signal $S$-parameters and large-signal microwave power characteristic. This approach allows a simple method to analyze and predict microwave multifinger InP DHBTs for power amplifier circuit design using commonly available computer-aided design tools such as Agilent-ADS.
机译：本文提出了一种基于电热耦合和电磁（EM）仿真的组合模型，用于基于多指InP的双异质结双极晶体管（DHBT）。基于3-D热模拟，对多指InP DHBT中发生的电热耦合效应进行了表征。此外，提出了EM仿真技术以解决手指及其周围环境相互连接的分布式影响。一个单指DHBT的大信号模型被实现为一个七端口符号定义的设备，它解释了几种物理现象，包括自热效应，柯克效应，电流阻挡效应，基极-集电极的移动电荷调制电容和传输时间中的速度场调制。通过比较直流小信号$ S $参数和大信号微波功率特性中的仿真数据和实测数据，验证了在Agilent-ADS中实现的组合模型。这种方法提供了一种简单的方法，可以使用常用的计算机辅助设计工具（例如Agilent-ADS）来分析和预测用于功率放大器电路设计的微波多指InP DHBT。

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