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首页> 外文期刊>Electron Devices, IEEE Transactions on >Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate
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Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate

机译：氧环境后沉积退火对带有氧化铈栅极的氮化镓基MOS电容器的影响

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摘要

This paper presents the effects of postdeposition annealing temperatures (400, 600, 800, and 1000 $^{circ}hbox{C}$) in oxygen ambient on the metal-organic decomposed $hbox{CeO}_{2}$ films spin coated on an n-type GaN substrate. The compositions, structures, and morphologies of these samples are revealed by X-ray diffraction (XRD), field-emission scanning electron microscopy, and an atomic force microscope. XRD analysis discloses the presence of $hbox{CeO}_{2}$ films, $alphahbox{-Ce}_{2}hbox{O}_{3}$, and an interfacial layer of $betahbox{-Ga}_{2}hbox{O}_{3}$. The formation of $alphahbox{-Ce}_{2}hbox{O}_{3}$ is due to the phase transformation of $hbox{CeO}_{2}$, whereas the $betahbox{-Ga}_{2}hbox{O}_{3}$ interfacial layer is formed due to the inward diffusion of the released oxygen from $hbox{CeO}_{2}$ reacting with decomposed GaN. These characterization results are then correlated with the metal–oxide–semiconductor characteristics of the $hbox{CeO}_{2}$ gate annealed at different temperatures. It has been demonstrated that oxide annealed at 1000 $^{circ}hbox{C}$ shows the lowest semiconductor–oxide interface-trap density, effective oxide charge, and the highest dielectric breakdown field.
机译：本文介绍了氧气环境中的沉积后退火温度（400、600、800和1000 $ ^ {circ} hbox {C} $）对金属有机分解的$ hbox {CeO} _ {2} $薄膜自旋的影响涂覆在n型GaN衬底上。这些样品的组成，结构和形态通过X射线衍射（XRD），场发射扫描电子显微镜和原子力显微镜揭示。 XRD分析表明存在$ hbox {CeO} _ {2} $膜，$ alphahbox {-Ce} _ {2} hbox {O} _ {3} $和$ betahbox {-Ga} _界面层{2} hbox {O} _ {3} $。 $ alphahbox {-Ce} _ {2} hbox {O} _ {3} $的形成是由于$ hbox {CeO} _ {2} $的相变，而$ betahbox {-Ga} _ { 2} hbox {O} _ {3} $界面层是由于从$ hbox {CeO} _ {2} $与分解的GaN反应释放的氧气向内扩散而形成的。然后，这些表征结果与在不同温度下退火的$ hbox {CeO} _ {2} $栅极的金属-氧化物-半导体特性相关。业已证明，在1000 hhbox {C} $下退火的氧化物显示出最低的半导体-氧化物界面陷阱密度，有效的氧化物电荷和最高的介电击穿场。

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