...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Electron Devices, IEEE Transactions on >Implementation of a Monolithic Single Proof-Mass Tri-Axis Accelerometer Using CMOS-MEMS Technique
【24h】

Implementation of a Monolithic Single Proof-Mass Tri-Axis Accelerometer Using CMOS-MEMS Technique

机译：利用CMOS-MEMS技术实现单片单质量三轴加速度计

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper presents a novel single proof-mass tri-axis capacitive type complementary metal oxide semiconductor-microelectromechanical system accelerometer to reduce the footprint of the chip. A serpentine out-of-plane (Z-axis) spring is designed to reduce cross-axis sensitivity. The tri-axis accelerometer has been successfully implemented using the TSMC 2P4M process and in-house postprocessing. The die size of this accelerometer chip containing the MEMS structure and sensing circuits is 1.78 $times$ 1.38 mm, a reduction of nearly 50% in chip size. Within the measurement range of 0.8 $sim$ 6G, the tri-axis accelerometer sensitivities (nonlinearity) of each direction are 0.53 mV/G (2.64%) for the X-axis, 0.28 mV/G (3.15%) for the Y-axis, and 0.2 mV/G (3.36%) for the Z-axis, respectively. In addition, the cross-axis sensitivities of these three axes range from 1% to 8.3% for the same measurement range. The noise floors in each direction are 120 mG/rtHz for the X-axis, 271 mG/rtHz for the Y-axis, and 357 mG/rtHz for the Z-axis.
机译：本文提出了一种新颖的单质量三轴电容型互补金属氧化物半导体-微机电系统加速度计，以减少芯片的占位面积。蛇形平面外（Z轴）弹簧旨在降低横轴灵敏度。三轴加速度计已使用TSMC 2P4M工艺和内部后处理成功实现。这种包含MEMS结构和传感电路的加速度计芯片的芯片尺寸为1.78 x 1.38毫米，芯片尺寸减少了近50％。在测量范围0.8 $ sim $ 6G中，每个方向的三轴加速度计灵敏度（非线性）对于X轴为0.53 mV / G（2.64％），对于Y-轴为0.28 mV / G（3.15％）轴，Z轴分别为0.2 mV / G（3.36％）。此外，对于相同的测量范围，这三个轴的跨轴灵敏度范围为1％至8.3％。 X轴每个方向的本底噪声为120 mG / rtHz，Y轴为271 mG / rtHz，Z轴为357 mG / rtHz。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号