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首页> 外文期刊>IEEE Transactions on Electron Devices >DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs
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DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

机译：AlGaN / GaN / InGaN / GaN双异质结HEMT的DC和RF特性

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摘要

We present the detailed dc and radio-frequency characteristics of an Al0.3Ga0.7N/GaN/In0.1Ga0.9 N/GaN double-heterojunction HEMT (DH-HEMT) structure. This structure incorporates a thin (3 nm) In0.1Ga0.9N notch layer inserted at a location that is 6-nm away from the AlGaN/GaN heterointerface. The In0.1Ga0.9N layer provides a unique piezoelectric polarization field which results in a higher potential barrier at the backside of the two-dimensional electron gas channel, effectively improving the carrier confinement and then reducing the buffer leakage. Both depletion-mode (D-mode) and enhancement-mode (E-mode) devices were fabricated on this new structure. Compared with the baseline AlGaN/GaN HEMTs, the DH-HEMT shows lower drain leakage current. The gate leakage current is also found to be reduced, owing to an improved surface morphology in InGaN-incorporated epitaxial structures. DC and small- and large-signal microwave characteristics, together with the linearity performances, have been investigated. The channel transit delay time analysis also revealed that there was a minor channel in the InGaN layer in which the electrons exhibited a mobility slightly lower than the GaN channel. The E-mode DH-HEMTs were also fabricated using our recently developed CF4-based plasma treatment technique. The large-signal operation of the E-mode GaN-based HEMTs was reported for the first time. At 2 GHz, a 1times100 mum E-mode device demonstrated a maximum output power of 3.12 W/mm and a power-added efficiency of 49% with single-polarity biases (a gate bias of +0.5 V and a drain bias of 35 V). An output third-order interception point of 34.7 dBm was obtained in the E-mode HEMTs
机译：我们介绍了Al0.3Ga0.7N / GaN / In0.1Ga0.9 N / GaN双异质结HEMT（DH-HEMT）结构的详细直流和射频特性。此结构在与AlGaN / GaN异质界面相距6 nm处插入了薄的（3 nm）In0.1Ga0.9N缺口层。 In0.1Ga0.9N层提供了独特的压电极化场，从而在二维电子气通道的背面产生了更高的势垒，从而有效地改善了载流子约束，进而减少了缓冲液的泄漏。耗尽模式（D模式）和增强模式（E模式）器件都是在这种新结构上制造的。与基线AlGaN / GaN HEMT相比，DH-HEMT的漏极泄漏电流更低。由于结合了InGaN的外延结构中表面形态的改善，还发现栅极漏电流得以减少。已经研究了直流，小信号和大信号微波特性以及线性性能。沟道传输延迟时间分析还显示，InGaN层中存在一个较小的沟道，其中电子的迁移率略低于GaN沟道。 E型DH-HEMT也是使用我们最近开发的基于CF4的等离子体处理技术制造的。首次报道了基于E模式GaN的HEMT的大信号操作。在2 GHz频率下，一个1×100微米的E模式器件在单极性偏置（栅极偏置为+0.5 V，漏极偏置为35 V）下显示出最大输出功率为3.12 W / mm，功率附加效率为49％。 ）。在E模式HEMT中获得了34.7 dBm的输出三阶拦截点

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