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首页> 外文期刊>IEEE Transactions on Electron Devices >Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation
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Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

机译：速度饱和下MOSFET小信号NQS参数异常高频行为的紧凑建模

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摘要

This paper presents a physical charge-based compact small-signal nonquasi-static (NQS) model for MOST, including velocity saturation and valid in all regions of inversion (from weak to strong inversion). This model intrinsically predicts the anomalous high-frequency behavior of transadmittance (y{sub}(dg)) in saturation, which was observed earlier in both device simulation and measurement. It also shows that the inclusion of velocity saturation causes the magnitude of the gate-to-drain admittance y{sub}(dg) to start to increase (instead of decreasing) above a certain frequency and its real part also starts to increase in the negative direction instead of becoming zero. In addition, even for a long channel MOST, the weak inversion charge present at the drain can also affect the y{sub}(dg) in a similar way.
机译：本文提出了一种基于物理电荷的MOST紧凑型小信号非准静态（NQS）模型，包括速度饱和和在反演所有区域（从弱反演到强反演）均有效的模型。该模型从本质上预测了饱和状态下的导纳（y {sub}（dg））的异常高频行为，这在设备仿真和测量中都已观察到。它也表明，包含速度饱和会导致栅极到漏极导纳的导数y {sub}（dg）在特定频率以上开始增加（而不是减少），并且其实部也开始增加。负方向而不是变为零。另外，即使对于长通道MOST，漏极上存在的弱反转电荷也可以以类似方式影响y {sub}（dg）。

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