How GaN-on-Si high-power LED chip technology is changing luminaire design

DEBBIE SNIDERMAN

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How GaN-on-Si high-power LED chip technology is changing luminaire design

机译：GaN-on-Si大功率LED芯片技术如何改变灯具设计

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The latest high-power silicon-based LED technology from Plessey Semiconductor is transforming form, function, and performance when it comes to luminaire design. Chip-onboard (COB) LEDs in a typical industrial luminaire are usually small, but the lens or reflector assembly and heat sink are much larger. New GaN-on-Si LED chip technology is changing it all, producing luminaire modules that are only 5.6 mm thick, including the optics. A single high-power GaN-on-Si chip can provide 30% more output through secondary optics than conventional four-chip solutions.

机译：Plessey Semiconductor的最新大功率基于硅的LED技术正在改变灯具设计的形式，功能和性能。典型的工业照明设备中的板载芯片（COB）LED通常很小，但是透镜或反射镜组件和散热器要大得多。新型的GaN-on-Si LED芯片技术正在改变这一切，包括光学器件在内，生产的厚度仅为5.6 mm的照明模块。与传统的四芯片解决方案相比，单个高功率GaN-on-Si芯片可通过辅助光学元件提供30％的输出。

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《Electronic products》 |2017年第2期|9-11|共3页
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DEBBIE SNIDERMAN;
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How GaN-on-Si high-power LED chip technology is changing luminaire design

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