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首页> 外文期刊>Electronicsletters >Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems
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Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems

机译：适用于UWB系统的低功耗，高增益和低噪声CMOS分布式放大器

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摘要

A 3-10 GHz CMOS distributed amplifier (DA) with flat and low noise figure (NF) and flat and high power gain (S_(21)) is demonstrated. A flat and low NF was achieved by adopting an RL terminating network for the gate transmission line, and a slightly under-damped Q-factor for the second-order NF frequency response. Besides, an flat and high S_(21) was achieved by using the proposed cascade gain cell, which constitutes a cascode-stage with a low-Q RLC load and an inductive-peaking common-source stage. In the high-gain mode, the DA consumed 37.8 mW and achieved a flat and high S_(21), of 20.47 + 0.72 dB with an average NF of 3.29 dB over the 3-10 GHz band of interest, one of the best reported NF performances for a CMOS UWB DA or low-noise amplifier. In the low-gain mode, the DA achieved S_(21) of 11.03 ± 0.98 dB and an average NF of 4.25 dB with a power dissipation (P_D) of 6.86 mW, the lowest P_D ever reported for a CMOS UWB DA or LNA with an average S_(21) of greater than 10 dB.
机译：演示了具有平坦和低噪声系数（NF）以及平坦和高功率增益（S_（21））的3-10 GHz CMOS分布式放大器（DA）。通过为栅极传输线采用RL端接网络和为二阶NF频率响应采用略微衰减的Q因子来实现平坦且低的NF。此外，通过使用所提出的级联增益单元实现了平坦且高的S_（21），该级联增益单元构成了具有低Q RLC负载的共源共栅级和电感性峰值共源级。在高增益模式下，DA消耗了37.8 mW，并在感兴趣的3-10 GHz频带上实现了20.47 + 0.72 dB的平坦和高S_（21），平均NF为3.29 dB，这是报道得最好的之一CMOS UWB DA或低噪声放大器的NF性能。在低增益模式下，DA的S_（21）为11.03±0.98 dB，平均NF为4.25 dB，功耗（P_D）为6.86 mW，这是有报道的CMOS UWB DA或LNA的最低P_D。平均S_（21）大于10 dB。

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  • 来源
    《Electronicsletters》 |2009年第12期|634-636|共3页
  • 作者

    J.-F. Chang; Y.-S. Lin;

  • 作者单位

    Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan;

    Department of Electrical Engineering, National Chi Nan University, Puli, Taiwan;

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