Electroabsorption modulator laser for cost-effective 40 Gbit/s networks with low drive voltage, chirp and temperature dependence

G. Aubin; J. Seoane; K. Merghem; M.S. Berger; C.F. Jespersen; A. Garreau; F. Blache; C. Jany; J.-G. Provost; C. Kazmierski; P. Jeppesen

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Electroabsorption modulator laser for cost-effective 40 Gbit/s networks with low drive voltage, chirp and temperature dependence

机译：电吸收调制器激光器，用于经济高效的40 Gbit / s网络，具有低驱动电压，线性调频和温度依赖性

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The performances of a novel low-chirp electroabsorption modulator laser module are presented. Transmission is analysed in standard sin-glemode fibre at 40 Gbit/s. Propagation without chromatic dispersion compensation up to 2 km exhibits a low penalty variation over a wide temperature range. A propagation scheme with compensation leads to negligible impairment at 88 km.

机译：介绍了新型低low电吸收调制器激光模块的性能。在标准的单模式光纤中以40 Gbit / s的速率分析传输。在没有色散补偿的情况下，高达2 km的传播在较宽的温度范围内显示出较低的惩罚变化。具有补偿的传播方案导致在88 km处的损伤可忽略不计。

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来源
《Electronicsletters》 |2009年第24期|1263-1264|共2页
作者
G. Aubin; J. Seoane; K. Merghem; M.S. Berger; C.F. Jespersen; A. Garreau; F. Blache; C. Jany; J.-G. Provost; C. Kazmierski; P. Jeppesen;
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Laboratory of Photonics and Nanostructure, CNRS, route de Nozay, Marcoussis 91460, France;

DTU Fotonik, Technical University of Denmark, Building 343, Kgs., Lyngby DK-2800, Denmark;

Laboratory of Photonics and Nanostructure, CNRS, route de Nozay, Marcoussis 91460, France;

DTU Fotonik, Technical University of Denmark, Building 343, Kgs., Lyngby DK-2800, Denmark;

DTU Fotonik, Technical University of Denmark, Building 343, Kgs., Lyngby DK-2800, Denmark;

Alcatel Thales III-V Lab, route de Nozay, Marcoussis 91461, France;

Alcatel Thales III-V Lab, route de Nozay, Marcoussis 91461, France;

Alcatel Thales III-V Lab, route de Nozay, Marcoussis 91461, France;

Alcatel Thales III-V Lab, route de Nozay, Marcoussis 91461, France;

Alcatel Thales III-V Lab, route de Nozay, Marcoussis 91461, France;

DTU Fotonik, Technical University of Denmark, Building 343, Kgs., Lyngby DK-2800, Denmark;

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1. Low drive voltage and extremely low chirp integrated electroabsorption modulator/DFB laser for 2.5 Gbit/s 200 km normal fibre transmission [J] . Aoki M., Kikuchi N. Electronics Letters . 1993,第22期

机译：低驱动电压和极低的线性调频集成电吸收调制器/ DFB激光器，可实现2.5 Gbit / s的200 km正常光纤传输
2. Low Chirp Operation of 40 Gbit/s Electroabsorption Modulator Integrated DFB Laser Module With Low Driving Voltage [J] . Fukano H., Akage Y., Kawaguchi Y., IEEE journal of selected topics in quantum electronics . 2007,第期

机译：具有低驱动电压的40 Gbit / s电吸收调制器集成DFB激光模块的低线性调频运行
3. High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure [J] . Aoki M., Suzuki M. Electronics Letters . 1992,第12期

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4. Low Driving-Voltage 40-Gbit/s Electroabsorption Modulator Integrated DFB Laser Module with Low Chirp Characteristics [C] . Hideki Fukano, Yuichi Akage, Yoshihiro Kawaguchi, IEEE International Semiconductor Laser Conference . 2006

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7. Electroabsorption modulator laser for cost-effective 40 Gbit/s networks with low drive voltage, chirp and temperature dependence [O] . Aubin G., Seoane Jorge, Merghem K., 2009

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8. Temperature Dependence of Transverse Planar Voltages in Laser-Irradiated Pt and Pd Films. [R] . von Gutfeld, R. J., Tynan, E. E. 1975

机译：激光辐照pt和pd薄膜中横向平面电压的温度依赖性。

Electroabsorption modulator laser for cost-effective 40 Gbit/s networks with low drive voltage, chirp and temperature dependence

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